Article
Chemistry, Multidisciplinary
Tabassom Arjmand, Maxime Legallais, Thi Thu Thuy Nguyen, Pauline Serre, Monica Vallejo-Perez, Fanny Morisot, Bassem Salem, Celine Ternon
Summary: This paper summarizes the key aspects of fabricating functional devices using bottom-up silicon nanowires. It briefly reviews the different ways of utilizing nanowires in functional devices and discusses the main properties of nanowires and nanonets. The paper also presents the main techniques for nanowire growth and manipulation, as well as the different families of nanowire-based transistors and their integration routes and electrical performance. It emphasizes the importance of key technological elements for the integration of silicon nanowires and reviews the main application areas for these devices.
Article
Chemistry, Physical
Ondrej Chmela, Imrich Gablech, Jakub Sadilek, Jan Brodsky, Stella Vallejos
Summary: This study focuses on the fabrication and characterization of ChemFET gas nanosensor arrays based on single nanowire. The fabrication processes utilize micro and nanofabrication techniques enabled by a combination of ultraviolet and e-beam lithography. Results show successful integration and connection of the nanowires in the ChemFET structure using dielectrophoresis process and alignment windows. Measurements demonstrate the influence of gate bias on drain current regulation and the sensing functionality of the ChemFET arrays.
Article
Chemistry, Multidisciplinary
Omri Heifler, Ella Borberg, Nimrod Harpak, Marina Zverzhinetsky, Vadim Krivitsky, Itay Gabriel, Victor Fourman, Dov Sherman, Fernando Patolsky
Summary: In order to reduce medical facility overload due to factors such as the rise of the elderly population and modern lifestyle diseases, the medical industry is developing point-of-care and home medical device systems. Tight glucose control is crucial for diabetic patients, but current limitations in system components hinder optimal management. Advanced closed-loop artificial pancreas systems are needed for automatic insulin delivery based on measured sensor glucose levels.
Article
Engineering, Electrical & Electronic
Varun Kumar Singh, Ankit Verma, Prashant Kumar, V. N. Mishra
Summary: In this study, a highly selective and sensitive hydrogen sulfide (H2S) gas sensor was developed using a thin film of conjugated organic polymer as the active sensing layer. The organic thin film was created using a cost-effective solution-processed floating film transfer method, and the annealing technique used enhanced the film's crystallinity and charge transfer properties, resulting in improved sensitivity. The fabricated organic field effect transistor (OFET) demonstrated excellent gas sensing performance for H2S gas at concentrations as low as 1 ppm.
IEEE SENSORS JOURNAL
(2023)
Article
Materials Science, Multidisciplinary
Jianlong Ji, Zhenxing Wang, Fan Zhang, Bin Wang, Yan Niu, Xiaoning Jiang, Zeng-ying Qiao, Tian-ling Ren, Wendong Zhang, Shengbo Sang, Zhengdong Cheng, Qijun Sun
Summary: A pulse-driven synaptic electrochemical transistor is proposed for supersensitive and ultrafast biosensors. By pulsing the input and setting the modulation potential, the sensor achieves high sensitivity and fast response. The optimized working point is found through mathematical derivations, providing higher sensitivity and non-fluctuating amplification capability. This transistor offers a new paradigm for standardizing and commercializing high-performance biosensors.
Article
Materials Science, Multidisciplinary
Srikrishna Sagar, Bikas C. Das
Summary: This study demonstrates a highly sensitive pH sensor using an organic thin-film as the sensing layer, with pH as the gate dielectric. The sensor shows good sensitivity and response speed in the pH range of 3 to 12, with stable performance over 300 seconds.
ORGANIC ELECTRONICS
(2022)
Article
Multidisciplinary Sciences
Omid Amiri, Gashaw L. Abdulla, Chnar M. Burhan, Hawnaz H. Hussein, Amir Mahyar Azhdarpour, Mohsen Saadat, Mohammad Joshaghani, Peshawa H. Mahmood
Summary: This study aims to enhance the efficiency of decontamination by using BaSO4 as a piezocatalyst. Three techniques were employed to improve the piezocatalytic activity of BaSO4, including coupling BaSO4 with BaTiO3, doping BaTiO3 with copper, iron, sulfur, and nitrogen, and modifying the nanostructures with sucrose. These strategies significantly improved the degradation efficiency of acid red 151 and acid blue 113, and the catalyst showed good reusability.
SCIENTIFIC REPORTS
(2022)
Article
Engineering, Electrical & Electronic
Suprovat Ghosh, Suchismita Tewari, Abhijit Biswas, Amlan Chakrabarti
Summary: This paper reports on unique InGaAs-based ISFET sensor devices with a sensing gate and traditional floating gate, using different barrier materials. Among them, the single barrier sensor device shows the highest threshold voltage sensitivity and I-ON/I-OFF ratio sensitivity, surpassing the conventional Nernst limit.
JOURNAL OF ELECTRONIC MATERIALS
(2021)
Article
Computer Science, Hardware & Architecture
Tanushree Ganguli, Manash Chanda, Angsuman Sarkar
Summary: This paper analyzes the impact of interface trap charge (ITC) on the power and delay of junctionless (JL) MOSFET circuits in the sub-threshold regime. Through analytical modeling and simulation validation, it is found that ITC and variation in trap occupancy probability modulate the threshold voltage of the device, which in turn affects the device/circuit performance.
COMPUTERS & ELECTRICAL ENGINEERING
(2022)
Article
Electrochemistry
Qiang Zou, Xiaole Wang, Qi Su, Tao Xue, Kuibo Lan
Summary: A pH sensor based on EGFET with microfluidic channels and a temperature sensor has been developed to overcome the challenges in body fluid collection and temperature compensation. The sensor, prepared by a low-cost solution-based process, can measure both body temperature and pH of body fluid. It has a temperature coefficient of resistance (TCR) up to 5.17% and shows a difference of only 0.17 celcius from the gold standard in body temperature measurement. The pH sensitivity is 58.41 mV pH(-1), with a deviation of only 0.066 from the standard pH value. The sensor is expected to have large-scale applications in wearable health monitoring.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
(2023)
Article
Chemistry, Physical
Shaoyuan Zhou, Mengmeng Xiao, Fangfang Liu, Jianping He, Yanxia Lin, Zhiyong Zhang
Summary: By adopting a floating gate (FG) field-effect-transistor (FET) structure with Y2O3 dielectric layer, the sensitivity and performance of carbon nanotube (CNT) based hydrogen sensors have been significantly enhanced, achieving a detection limit of 90 ppb and even down to 5 ppb at 100 degrees C. FG FET sensors show more than one magnitude enhancement in response compared to conventional resistance-type sensors, with excellent stability and compatibility to CNT integrated circuits, making them a potential platform for developing smart sensors.
Article
Chemistry, Analytical
Yi Yang, Zicheng Lu, Duo Liu, Yuelin Wang, Shixing Chen, Tie Li
Summary: SiNWs-FET sensors with triangular cross-sections have the highest surface-to-volume ratio and depletion ratio, leading to enhanced sensitivity; manufacturing processes like EBL and CVD can affect sensor sensitivity, while WETO methods result in fewer surface defects and higher quality lattices.
Article
Engineering, Electrical & Electronic
Varun Kumar Singh, V. N. Mishra
Summary: We have reported a highly efficient, low-voltage, and cost-effective H2S gas sensor utilizing a nanocomposite thin film of conjugated organic polymer and inorganic material as an active sensing layer. By employing methods such as photoirradiation and solvent vapor annealing, the molecular ordering and charge transfer of the polymer chains were enhanced, leading to significantly improved gas sensing performance.
IEEE SENSORS JOURNAL
(2023)
Article
Engineering, Electrical & Electronic
Hyun Jae Lee, Taehwan Moon, Sukin Kang, Woohyun Kim, Cheol Seong Hwang
Summary: By decreasing the thickness of the ZnO thin film, the performance of the transistor can be significantly improved, however, an excessively high negative threshold voltage leads to power consumption issues. Optimizing the thickness of the ZnO thin film can shift the V-th positively and enhance the device performance.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
Article
Physics, Multidisciplinary
Farzad Mehrdad, Zahra Ahangari
Summary: This study presents a multi-gas sensing device utilizing a junctionless FinFET with conducting polymer as the gate material. The higher gas response is achieved through workfunction modulation of the conducting polymer gate. The main focus of this study is to design a low power device capable of detecting changes in electrical characteristics even without gate bias. The proposed FinFET device demonstrates high sensitivity as a gas sensor due to its large surface area.
Article
Nanoscience & Nanotechnology
Raphael Boeckle, Masiar Sistani, Martina Bazikova, Lukas Wind, Zahra Sadre-Momtaz, Martien den Hertog, Corban G. E. Murphey, James F. Cahoon, Walter M. Weber
Summary: Metal-semiconductor heterostructures with geometrically reproducible and abrupt Schottky nanojunctions are crucial for emerging electronic technologies. By implementing a nanoscale Al-Si-Al heterostructure with single elementary, monocrystalline Al leads and sharp Schottky junctions, and utilizing a three top-gate architecture, transistor-level reconfiguration is enabled, expanding device functionality and providing additional logical inputs. The demonstrated material system and logic gates show high compatibility with state-of-the-art complementary metal-oxide semiconductor technology, potentially paving the way for future adaptive computing systems.
ADVANCED ELECTRONIC MATERIALS
(2023)
Article
Nanoscience & Nanotechnology
Roberto Guido, Patrick D. Lomenzo, Md Redwanul Islam, Niklas Wolff, Maike Gremmel, Georg Schoenweger, Hermann Kohlstedt, Lorenz Kienle, Thomas Mikolajick, Simon Fichtner, Uwe Schroeder
Summary: The discovery of ferroelectricity in aluminum scandium nitride (Al1-xScxN) shows potential for technological applications in harsh environments and space-related memory applications. The high-temperature stability of piezoelectricity in aluminum nitride enhances the viability of this material. Through a combination of electrical and in-situ X-ray diffraction measurements, as well as transmission electron microscopy and energy-dispersive X-ray spectroscopy, the ferroelectric and material properties of 100 nm-thick Al0.72Sc0.28N have been studied up to 873 K. The findings demonstrate that Al0.72Sc0.28N can achieve high switching polarization and tunable coercive fields within a temperature range of 375 K from room temperature to 673 K.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Chemistry, Multidisciplinary
Furqan Mehmood, Ruben Alcala, Pramoda Vishnumurthy, Bohan Xu, Ridham Sachdeva, Thomas Mikolajick, Uwe Schroeder
Summary: Further optimization of a Hf0.5Zr0.5O2 ferroelectric capacitor with TiN electrodes is achieved by introducing a non-ferroelectric La2O3 interfacial layer. The role of this interface in the reliability of the device for non-volatile memory applications is discussed, highlighting the importance of modifying the bottom interface for improved performance.
ADVANCED MATERIALS INTERFACES
(2023)
Article
Chemistry, Multidisciplinary
Patrick D. Lomenzo, Liam Collins, Richard Ganser, Bohan Xu, Roberto Guido, Alexei Gruverman, Alfred Kersch, Thomas Mikolajick, Uwe Schroeder
Summary: The emergence of ferroelectric and antiferroelectric properties in HfO2 and ZrO2 high-k dielectrics is leading to unexpected technological developments. However, the lack of clear distinction between these behaviors is hindering progress. This study uses band-excitation piezoresponse force microscopy and molecular dynamics to elucidate electric field-induced phase transitions in ZrO2-based antiferroelectrics. The nanoscale phase transitions discovered in this study provide new opportunities for the development of nanoelectronic devices.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Physics, Applied
R. Behrle, M. Sistani, A. Lugstein, Z. Sadre Momtaz, M. I. den Hertog, D. Pogany, W. M. Weber
Summary: This study focuses on the analysis of low-frequency noise in Al2O3-passivated, monolithic, and crystalline Al-Ge-Al heterostructure nanowire field effect transistors. It investigates the occurrence of 1/f noise and random telegraph noise (RTN) in an accumulation mode, where a hole channel is formed by applying a back-gate potential V-G. The results suggest that 1/f noise can be analyzed using both the mobility and carrier number fluctuation models (MFM and CNFM) respectively.
APPLIED PHYSICS LETTERS
(2023)
Article
Physics, Applied
H. Alex Hsain, Younghwan Lee, Patrick D. Lomenzo, Ruben Alcala, Bohan Xu, Thomas Mikolajick, Uwe Schroeder, Gregory N. Parsons, Jacob L. Jones
Summary: Ferroelectric hafnium-zirconium oxide (HZO) is a promising material for low-power non-volatile memory applications due to its ferroelectricity at the nanoscale and compatibility with silicon-based technologies. The interface between HZO and its electrode is crucial for device performance. In this study, the effect of breaking vacuum during the sequential deposition steps is investigated. The results show that breaking vacuum after bottom electrode deposition leads to interfacial oxidation and increased carbon contamination, which affect the ferroelectric properties.
JOURNAL OF APPLIED PHYSICS
(2023)
Article
Materials Science, Coatings & Films
Stefan Schmult, Pascal Appelt, Claudia Silva, Steffen Wirth, Andre Wachowiak, Andreas Grosser, Thomas Mikolajick
Summary: Inconsistencies in the concentrations of unintentional donor impurities and free charge carriers in GaN/AlGaN layer stacks containing a two-dimensional electron gas (2DEG) can be explained by the measurement procedure and the method of extracting the free charge carrier concentration. When the 2DEG acts as the bottom electrode in capacitance versus voltage measurements, unphysically low concentrations of free charges are calculated due to the depletion of the 2DEG and the disappearance of the bottom electrode. It is shown that, for the case of a defined (non-vanishing) bottom electrode, the levels of donor impurities and resulting free charges consistently match.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2023)
Article
Chemistry, Physical
Neeraj Bangruwa, Mayra Suryansh, Mayra Peralta, Rafael Gutierrez, Gianaurelio Cuniberti, Debabrata Mishra
Summary: In this study, we investigate the sequence-dependent chiral-induced spin selectivity (CISS) in double-stranded DNA. By using time-correlated single-photon counting and electrochemical impedance spectroscopy, we find that the average lifetime of photo-excited electrons is influenced by the CISS effect generated by the DNA molecule. The observed experimental trends are supported by simulations using a tight binding method.
JOURNAL OF CHEMICAL PHYSICS
(2023)
Article
Chemistry, Physical
Mayra Peralta, Steven Feijoo, Solmar Varela, Rafael Gutierrez, Gianaurelio Cuniberti, Vladimiro Mujica, Ernesto Medina
Summary: We investigate the role of electron-spin-phonon coupling in DNA using an effective model Hamiltonian and its connection to the Chiral-Induced Spin Selectivity (CISS) effect. The semiclassical electron transfer in a tight-binding model of DNA with intrinsic spin-orbit coupling is described using the envelope function approach. We find that only acoustic modes exhibit spin-phonon coupling, while optical modes show electron-phonon interaction without spin coupling. An effective Hamiltonian is derived, in which the eigenstates carry spin currents protected by spin-inactive stretching optical modes. The stronger interaction between optical phonons and electrons allows for the decoherence effects and the spin filtering effects observed in CISS.
JOURNAL OF CHEMICAL PHYSICS
(2023)
Article
Chemistry, Physical
Mohammad Khazaei, Soungmin Bae, Rasoul Khaledialidusti, Ahmad Ranjbar, Hannu-Pekka Komsa, Somayeh Khazaei, Mohammad Bagheri, Vei Wang, Yasuhide Mochizuki, Mitsuaki Kawamura, Gianaurelio Cuniberti, S. Mehdi Vaez Allaei, Kaoru Ohno, Hideo Hosono, Hannes Raebiger
Summary: MAX phases are layered non-van der Waals materials composed of stacking hexagonal layers of transition metal (M), a group III-VI element(A), and carbon or nitrogen (X). Through high-throughput calculations, 761 dynamically stable MAX phases have been identified, with 466 structures potentially synthesizable. To discover new structural phases, 361 MAX systems with dynamical instabilities were investigated, leading to the discovery of novel superlattices by reconstructing the triangular lattice of A-atoms into 0D-clusters, quasi-1D-chains, or creating 2D Haeckelite or Kagome-like lattices. This work introduces a new approach to discovering novel MAX phases from conventional structures without element alloying.
JOURNAL OF PHYSICAL CHEMISTRY C
(2023)
Article
Chemistry, Physical
Alvaro Rodriguez Mendez, Arezoo Dianat, Leonardo Medrano Sandonas, Rafael Gutierrez, Gianaurelio Cuniberti
Summary: In this study, the electronic properties of phosphorene monolayers functionalized with hydroxyl and cysteine molecules were investigated using spin-polarized density-functional theory. It was found that functionalization not only induced electronic states within the semiconducting gap, but also resulted in local magnetism. The ferro- or anti-ferromagnetic ground states could be obtained depending on molecular coverage, lattice direction, and molecular chirality. Functionalized phosphorene monolayers were proposed as bipolar magnetic semiconductors based on the obtained spin-dependent band structures. The electronic parameters used to characterize bipolar magnetic semiconductors became increasingly distinct with increasing surface coverage, suggesting a possible route for designing such materials via targeted molecular functionalization.
JOURNAL OF PHYSICAL CHEMISTRY C
(2023)
Article
Chemistry, Multidisciplinary
Roberto Guido, Thomas Mikolajick, Uwe Schroeder, Patrick D. Lomenzo
Summary: Aluminum scandium nitride (Al1-x Sc x N) with large remanent polarization is attractive for high-density ferroelectric random-access memories. However, its cycling endurance is lower than other ferroelectric materials. Understanding the breakdown mechanism is crucial for improving memory reliability. Filaments formed due to impulse thermal process along defective pathways are proposed to play a role in the breakdown of Al1-x Sc x N ferroelectric capacitors. Stable bipolar filamentary resistive switching has been reported for the first time.
Review
Chemistry, Analytical
Alexandra Parichenko, Shirong Huang, Jinbo Pang, Bergoi Ibarlucea, Gianaurelio Cuniberti
Summary: Inspired by biological noses, e-noses imitate them by using gas sensor arrays to detect and identify surrounding gases and volatile compounds. Two-dimensional materials have shown remarkable sensitivity at room temperature, addressing energy efficiency and sensitivity issues. This review highlights advancements in the development of e-noses, including transduction mechanisms and deposition methods for two-dimensional materials. Artificial intelligence tools are discussed for smart data analysis to overcome selectivity limitations.
TRAC-TRENDS IN ANALYTICAL CHEMISTRY
(2023)
Article
Multidisciplinary Sciences
Suchetana Sarkar, Kwan Ho Au-Yeung, Tim Kuehne, Albrecht Waentig, Dmitry A. Ryndyk, Thomas Heine, Gianaurelio Cuniberti, Xinliang Feng, Francesca Moresco
Summary: We investigated a prochiral thiophene-based molecule that self-assembles on the Au(111) surface forming islands with different domains using low temperature scanning tunneling microscopy. Two different conformations of the single molecule were observed in the domains, depending on the rotation of bromothiophene groups. By applying voltage pulses from the tip, single molecules could be switched between the two conformations. Scanning tunneling spectroscopy revealed that electronic resonances were mainly localized at the same positions in both conformations. Density-functional theory calculations supported the experimental findings. Moreover, we found that on Ag(111), only one configuration was present and the switching effect was suppressed.
SCIENTIFIC REPORTS
(2023)
Article
Computer Science, Artificial Intelligence
Wenqi Wang, Run Wang, Lina Wang, Zhibo Wang, Aoshuang Ye
Summary: Deep neural networks have achieved remarkable success in various tasks, but they are vulnerable to adversarial examples in both image and text domains. Adversarial examples in the text domain can evade DNN-based text analyzers and pose threats to the spread of disinformation. This paper comprehensively surveys the existing studies on adversarial techniques for generating adversarial texts and the corresponding defense methods, aiming to inspire future research in developing robust DNN-based text analyzers against known and unknown adversarial techniques.
IEEE TRANSACTIONS ON KNOWLEDGE AND DATA ENGINEERING
(2023)
