Single step fabrication of N-doped graphene/Si3N4/SiC heterostructures

标题
Single step fabrication of N-doped graphene/Si3N4/SiC heterostructures
作者
关键词
epitaxial graphene, spectroscopy, nitrogen-doped graphene, low-energy electron microscopy, electronic properties
出版物
Nano Research
Volume 7, Issue 6, Pages 835-843
出版商
Springer Nature
发表日期
2014-05-08
DOI
10.1007/s12274-014-0444-9

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