期刊
NANO LETTERS
卷 14, 期 2, 页码 585-591出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl4037559
关键词
Ge/Si; core/shell; nanowire; field effect transistor; mobility; diameter dependence; bandgap engineering
类别
资金
- National Nuclear Security Administration of the U.S. Department of Energy [DE-AC52-06NA25396]
- faculty start-up fund at UC San Diego
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1351980] Funding Source: National Science Foundation
Heterostructure engineering capability, especially in the radial direction, is a unique property of bottom-up nanowires (NWs) that makes them a serious candidate for high-performance field-effect transistors (RETs). In this Letter, we present a comprehensive study on size dependent carrier transport behaviors in vapor liquid solid grown Ge/Si core/shell NWFETs. Transconductance, subthreshold swing, and threshold voltage exhibit a linear increase with the NW diameter due to the increase of the transistor body size. Carrier confinement in this core/shell architecture is shown to maintain a diameter-independent hole mobility as opposed to surface-induced mobility degradation in homogeneous Ge NWs. The Si shell thickness also exhibits a slight effect on the hole mobility, while the most abrupt mobility transition is between structures with and without the Si shell. A hole mobility of 200 cm(2)/(V.s) is extracted from transistor performance for core/shell NWs with a diameter range of 15-50 nm and a 3 nm Si shell. The constant mobility enables a complete and unambiguous dependence of FET performance on NW diameter to be established and provides a caliper for performance comparisons between NWFETs and with other FET families.
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