期刊
NANO LETTERS
卷 14, 期 6, 页码 3504-3509出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl5010724
关键词
Nanowire; field effect transistor; single trap; random telegraph signal (RTS) noise; biosensors
类别
资金
- Helmholtz Association
- Chinese Scholarship Council (Helmholtz-CSC)
- German Academic Exchange Service (DAAD)
Trapping-detrapping processes in nanostructures are generally considered to be destabilizing factors. However, we discovered a positive role for a single trap in the registration and transformation of useful signal. We use switching kinetics of current fluctuations generated by a single trap in the dielectric of liquid-gated nanowire field effect transistors (FETs) as a basic principle for a novel highly sensitive approach to monitor the gate surface potential. An increase in Si nanowire FET sensitivity of 400% was demonstrated.
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