期刊
NANO LETTERS
卷 14, 期 9, 页码 5118-5122出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl501845m
关键词
Quantum-confined Stark effect; internal polarization fields; group III-nitride; GaN/AlGaN; single nanowire; microphotoluminescence
类别
资金
- LOEWE program of excellence of the Federal State of Hessen (project initiative STORE-E)
- Federal Ministry for Education and Research (BMBF) within the project SINOMICS
- Laboratory of Materials Research (LaMa) of JLU
- Generalitat de Catalunya [2014 SGR 1638]
- CSIC Jae-Predoc program
- ICREA Funding Source: Custom
We demonstrate the direct analysis of polarization-induced internal electric fields in single GaN/Al0.3Ga0.7N nanodiscs embedded in GaN/AlN nanowire heterostructures. Superposition of an external electric field with different polarity results in compensation or enhancement of the quantum-confined Stark effect in the nanodiscs. By field-dependent analysis of the low temperature photoluminescence energy and intensity, we prove the [000 (1) over bar]-polarity of the nanowires and determine the internal electric field strength to 1.5 MV/cm.
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