Article
Physics, Applied
Xiao Li, Xuezhe Yu, Haotian Zeng, Giorgos Boras, Kai Shen, Yunyan Zhang, Jiang Wu, Kwang Leong Choy, Huiyun Liu
Summary: GaAs nanowire-based metal-semiconductor-metal photodetectors achieve enhanced photoresponsivity and reduced response time through surface treatment and interfacial contact optimization. The design demonstrates good repeatability of dynamic photo-switching characteristics and stability, making GaAs nanowires a promising candidate for high-performance and reliable nano-photodetection in the visible range.
APPLIED PHYSICS LETTERS
(2021)
Article
Optics
Yi Li, Xin Yan, Xia Zhang, Chao Wu, Jiahui Zheng, Chaofei Zha, Tianyang Fu, Li Gong, Xiaomin Ren
Summary: A core-shell GaAs/InGaAs nanowire/quantum dot hybrid structure nanolaser is proposed in this study, which can enhance the spontaneous radiation rate of quantum dots to achieve higher laser intensity while reducing the threshold, paving the way for the development of ultra-small low-consumption near infrared lasers.
OPTICS AND LASER TECHNOLOGY
(2022)
Article
Optics
Annu Dahiya, Pandian Senthil Kumar
Summary: Based on the concept of optical nanoantennas, this study numerically simulates the light-matter interaction between metal heterodimer (Ag and Au spherical nanoparticles) and single dipole emitter system using MATLAB toolbox MNPBEM17 based on boundary element method. The precise position and orientation of the dipole emitter control not only the losses, but also the efficiency of excitation and emission processes. The analysis helps estimate the emission of dipole emitter and assesses the flow of electromagnetic energy in the plasmonic optical antenna system.
OPTICS AND LASER TECHNOLOGY
(2023)
Article
Nanoscience & Nanotechnology
Abhiroop Chellu, Eero Koivusalo, Marianna Raappana, Sanna Ranta, Ville Polojarvi, Antti Tukiainen, Kimmo Lahtonen, Jesse Saari, Mika Valden, Heli Seppanen, Harri Lipsanen, Mircea Guina, Teemu Hakkarainen
Summary: Several passivation techniques for close-to-surface InAs/GaAs quantum dots were compared for their ability to preserve optical properties. It was found that AlNx passivation method significantly reduces surface recombination velocity and shows long-term stability.
Article
Nanoscience & Nanotechnology
Piotr Caban, Rafal Pietruszka, Jaroslaw Kaszewski, Monika Ozga, Bartlomiej S. Witkowski, Krzysztof Kopalko, Piotr Ku zmiuk, Katarzyna Gwozdz, Ewa Placzek-Popko, Krystyna Lawniczak-Jablonska, Marek Godlewski
Summary: In this study, the effects of different treatments on the surface of gallium arsenide on the external quantum efficiency of photovoltaic cells have been investigated through experiments. Various characterization techniques such as AFM, SEM, XPS, PL, and bandgap measurements were employed to analyze device structures and interface changes. The results showed that the highest EQE value was achieved by initially etching the samples with a citric acid-based etchant, followed by either sulfur passivation or ammonium hydroxide treatment.
BEILSTEIN JOURNAL OF NANOTECHNOLOGY
(2021)
Article
Engineering, Electrical & Electronic
Shahram Mohammadnejad, Amine Mahmoudi, Hossein Arab
Summary: In this study, the finite difference time domain method was used to simulate the emission from PbS quantum dots in a hexagonal InP nanowire as a single photon source. The effects of nanowire height, radius, dipole source location, and orientation on the Purcell factor and Quality factor of the nanowire were investigated. The optimized nanowire structure had a hexagonal cross section with a radius of 220 nm and a height of 10 μm, yielding emission peak above 1 μm with a Purcell factor of 5.45, which is suitable for single photon sources in quantum communications.
OPTICAL AND QUANTUM ELECTRONICS
(2022)
Article
Chemistry, Multidisciplinary
Debanjan Maity, Partha Ghosal, Melepurath Deepa
Summary: Antimony nanorods (SbNRs) anchored to vertically aligned SiNWs serve as cosensitizers and enhance the light absorption of NWs, and their favorably positioned valence band (VB) coupled with their p-type semiconducting nature allows fast hole extraction from SiNWs. Photocorrosion of SiNWs is effectively prevented by a monolayer of N-[3-(trimethoxysilyl)propyl]aniline (TMSPA). A quasi-solid-state solar cell with a SbNRs@TMSPA@SiNW photoanode, Cu2O NCs as the hole transport material, and NiO as the counter electrode achieves a power conversion efficiency (PCE) of 4.7% (under 1 sun), which is significantly higher than a cell without Cu2O NCs and SbNRs. The high PCE and stability of this solar cell architecture make it a promising candidate for future solar cell applications.
Article
Engineering, Electrical & Electronic
Peihang Li, Peng Yu, Wenhao Wang, Feng Lin, Hongxing Xu, Zhiming Wang
Summary: This study introduces the use of plasmonic nanoantennas and metal hybrid structures to enhance the single-photon emission rate and directional radiation of individual III-V quantum dots, shedding light on their potential as single-mode waveguides.
JOURNAL OF LIGHTWAVE TECHNOLOGY
(2021)
Article
Chemistry, Multidisciplinary
Rodion R. Reznik, George E. Cirlin, Konstantin P. Kotlyar, Igor V. Ilkiv, Nika Akopian, Lorenzo Leandro, Valentin V. Nikolaev, Alexey V. Belonovski, Mikhail A. Kaliteevski
Summary: Control of emission directionality plays a crucial role in the development of novel nanophotonic devices based on nanowires. In this study, we demonstrate highly directional light emissions near 800 nm wavelength from core-shell AlGaAs nanowires with GaAs quantum dots, despite inefficient emission into waveguided modes. Experimental measurements show significantly higher emission intensity around the axis of the nanowire compared to perpendicular directions, suggesting that axial electric dipole transitions in quantum dots contribute to directional emissions.
Article
Physics, Multidisciplinary
Janine Franz, Stefan Yoshi Buhmann
Summary: This article provides analytical expressions for the rates of different relaxation processes in a two-atom system and compares these rates in free space to determine the dominant decay channel. The study shows that the ratio between the two dominating decay rates can be controlled by modifying the excitation propagation. The article also discusses the impact of a surface and a cavity on the decay rates.
NEW JOURNAL OF PHYSICS
(2022)
Article
Chemistry, Physical
Ricardo Jimenez-Sanchez, Sara E. Perez-Figueroa, Alejandro Trejo-Banos, Alvaro Miranda, Fernando Salazar, Miguel Cruz-Irisson
Summary: This study investigates the effects of surface Li on the electronic properties of H passivated GaAs nanowires using Density Functional Theory. The results show high binding energies and band gaps, which would hinder the application of GaAs nanowires in Li-ion batteries.
SURFACES AND INTERFACES
(2023)
Article
Chemistry, Multidisciplinary
Xutao Zhang, Ruixuan Yi, Nikita Gagrani, Ziyuan Li, Fanlu Zhang, Xuetao Gan, Xiaomei Yao, Xiaoming Yuan, Naiyin Wang, Jianlin Zhao, Pingping Chen, Wei Lu, Lan Fu, Hark Hoe Tan, Chennupati Jagadish
Summary: The research presents single-mode nanowire lasers with an ultralow threshold and high power output in the near-infrared spectral range. Control of nanowire diameter and length, reduction of longitudinal and transverse modes, and compensation with excellent nanowire morphology and InGaAs/GaAs multiquantum disks enable single-mode operation with a threshold as low as 48 mu J/cm(2) at room temperature, high characteristic temperature, and high power output.
Article
Optics
C. K. Jiang, J. H. Li, Z. H. Han, Y. Ma, Y. Q. Ma
Summary: The study introduces a novel double-nanohole-assisted cavity structure which can enhance the Purcell factor up to 6.5 x 10(4) over the visible spectrum, offering new opportunities for integrated quantum circuits with single-photon emitters.
Article
Chemistry, Multidisciplinary
Bogdan R. R. Borodin, Prokhor A. A. Alekseev, Vladislav Khayrudinov, Evgeniy Ubyivovk, Yury Berdnikov, Nickolay Sibirev, Harri Lipsanen
Summary: Control over doping at the nanoscale during nanostructure growth is crucial for device fabrication. This study investigates the p (Zn)- and n (Sn)- doping distributions and the formation of 3D p-n junctions in planar GaAs nanowires grown on doped GaAs substrates. Various techniques, including scanning electron microscopy, transmission electron microscopy, and conductive atomic force microscopy, are used to analyze the nanowire morphology and doping distribution. The results show that bipolar transistor-like lateral nanostructures can be formed during p-n or n-p growth on misoriented (001) GaAs substrates, while core-shell field effect transistor-like structures can be synthesized on singular (001) substrates. The effects of substrate misorientation on 3D doping distribution are attributed to the preferential incorporation of dopants in polar side facets compared to a non-polar top (001) facet.
Article
Materials Science, Multidisciplinary
Yihang Du, Yun Gao, Junjie Si, Zhuopeng Du, Rui Xu, Qianqing Hu, Xiaoming Hao, Xinquan Gong, Zenan Zhang, Hong Zhao, Peiqing Cai, Qi Ai, Xin Yao, Muzhi Cai, Zhizhen Ye, Xingliang Dai, Zugang Liu
Summary: In this study, high-quality bromine-based perovskite films were successfully prepared by an amidation reaction on ZnO films, and a carboxylate-rich zinc-magnesium oxide film was further developed to grow high-quality FAPbBr3 crystals. The inverted PeLEDs showed excellent performance with a low turn-on voltage of 1.8V and a peak external quantum efficiency of 12.7%.
ACS MATERIALS LETTERS
(2023)
Article
Physics, Applied
Xinrong Zuo, Ziyuan Li, Wei Wen Wong, Yang Yu, Xi Li, Jun He, Lan Fu, Hark Hoe Tan, Chennupati Jagadish, Xiaoming Yuan
Summary: In this work, InAs nanosheet arrays were proposed and designed to achieve polarization-independent, angle-insensitive, and ultrawide infrared absorption. By optimizing the design, high absorption in a broad wavelength range from visible light to mid-wave infrared was achieved.
APPLIED PHYSICS LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Wei Wen Wong, Chennupati Jagadish, Hark Hoe Tan
Summary: III-V WGM micro-cavity lasers are widely used in modern optoelectronic devices, with excellent optical performance. This review presents advances in fabrication techniques, emission outcoupling methods, and practical applications. Highly-scalable bottom-up methods have shown potential for fabricating low-loss WGM lasers. Various techniques have been developed to outcouple WGM emission into waveguides or direct it into free-space with small beam divergence. In addition to serving as integrated photonic components, III-V WGM micro-cavity lasers have demonstrated exciting potential in label-free sensing and cQED research.
IEEE JOURNAL OF QUANTUM ELECTRONICS
(2022)
Article
Multidisciplinary Sciences
Hannah L. Stern, Qiushi Gu, John Jarman, Simone Eizagirre Barker, Noah Mendelson, Dipankar Chugh, Sam Schott, Hoe H. Tan, Henning Sirringhaus, Igor Aharonovich, Mete Atature
Summary: In this study, the authors demonstrate optically detected magnetic resonance (ODMR) for single carbon-related defects in hexagonal boron nitride at room temperature, with significantly stronger contrast than the ensemble average. These findings offer a promising route towards realizing a room-temperature spin-photon quantum interface in hexagonal boron nitride.
NATURE COMMUNICATIONS
(2022)
Article
Physics, Applied
Kousik Bera, Dipankar Chugh, Hark Hoe Tan, Anushree Roy, Chennupati Jagadish
Summary: Wafer-scale thin films of hexagonal boron nitride have exceptional thermal and mechanical properties. The characteristics of substrates influence the physical and mechanical properties of these films. The roughness and height modulation at the surface of the substrates play a crucial role in determining substrate-mediated mechanical strain inhomogeneity in these films. Furthermore, there is a significant difference in the thermal evolution of strain in these films depending on substrate materials, with slippage playing a more significant role in 2 nm films than in 30 nm films.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Nanoscience & Nanotechnology
Mohammad Rashidi, Tuomas Haggren, Chennupati Jagadish, Hark Hoe Tan
Summary: This research presents a hybrid nanolaser that supports both Fabry-Perot and random lasing modes. The study demonstrates different lasing properties of these modes, including wavelength, polarization, and coherency. Practical methods are introduced to distinguish these modes, and thermal tuning is used to switch between different laser types.
Article
Nanoscience & Nanotechnology
Tuomas Haggren, Vidur Raj, Anne Haggren, Nikita Gagrani, Chennupati Jagadish, Hoe Tan
Summary: This report demonstrates the construction of a hole-selective III-V semiconductor solar cell on i-GaAs using copper iodide (CuI) and optimization of the GaAs surface passivation and oxygen content of CuI, leading to high open-circuit voltage and solar conversion efficiency.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Nanoscience & Nanotechnology
Tuomas Haggren, Julie Tournet, Chennupati Jagadish, Hark Hoe Tan, Jani Oksanen
Summary: A scalable multilayer epitaxial lift-off process is demonstrated, which allows efficient removal of epitaxially grown materials from their host substrate without external strains. The films retain good integrity after lift-off and can be further processed into devices. Cost analysis shows a 4-to-6-fold reduction in cost compared to the single-layer epitaxial lift-off process, making it significant for III-V photovoltaics and other technologies relying on thin-film III-V semiconductors.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Optics
Wei Wen Wong, Naiyin Wang, Chennupati Jagadish, Hark Hoe Tan
Summary: This study presents a novel approach to realize on-chip microlasers with directional emission in an all-dielectric, bottom-up grown material system. By coupling the laser emission into a vertical nanowire, efficient optical coupling is achieved and the emission directivity and side mode suppression can be improved by tuning the geometric parameters of the system.
LASER & PHOTONICS REVIEWS
(2023)
Article
Chemistry, Multidisciplinary
Ruixuan Yi, Xutao Zhang, Fanlu Zhang, Linpeng Gu, Qiao Zhang, Liang Fang, Jianlin Zhao, Lan Fu, Hark Hoe Tan, Chennupati Jagadish, Xuetao Gan
Summary: This article reports a simple and facile integration strategy of a laser source in passive photonic integrated circuits using semiconductor nanowires embedded in waveguides. The method is applicable to other PIC platforms and promises CMOS compatibility.
Article
Chemistry, Multidisciplinary
Jun-Wei Liao, Zhen-Ting Huang, Chia-Hung Wu, Nikita Gagrani, Hark Hoe Tan, Chennupati Jagadish, Kuo-Ping Chen, Tien-Chang Lu
Summary: In this study, localized surface plasmon lasing at room temperature in the communication band was achieved using metallic nanoholes as plasmonic nanocavity and InP nanowires as gain medium. Optimization of laser performance was demonstrated through coupling between two metallic nanoholes, allowing for manipulation of lasing properties. These plasmonic nanolasers offer lower power consumption, smaller mode volumes, and higher spontaneous emission coupling factors, making them promising for high-density sensing and photonic integrated circuits.
Article
Optics
Khosro Zangeneh Kamali, Lei Xu, Nikita Gagrani, Hark Hoe Tan, Chennupati Jagadish, Andrey Miroshnichenko, Dragomir Neshev, Mohsen Rahmani
Summary: Metasurfaces with dynamic tunability in their optical behaviour are highly desired for various applications. In this study, we demonstrate electrically tunable metasurfaces driven by thermo-optic effect and flash-heating in silicon. The device allows for video frame rate optical switching over multiple pixels and is compatible with modern electronic display technologies. It shows advantages such as large modulation depth, low optical loss, low input voltage requirement, and high switching speed.
LIGHT-SCIENCE & APPLICATIONS
(2023)
Article
Nanoscience & Nanotechnology
Bikesh Gupta, Doudou Zhang, Hongjun Chen, Chennupati Jagadish, Hark Hoe Tan, Siva Karuturi
Summary: This study presents a novel approach for fabricating high-performance solar cells based on InP heterojunctions using a solution-processed ferri-hydrite (Fh) electron-selective contact (ESC). The champion cell efficiency of 16.6% is achieved, which is a significant improvement over those from previous studies using other solution-processed ESC materials. The Fh layer not only selectively extracts photogenerated electrons from InP but also simultaneously serves as a surface protection layer, improving the cell's long-term stability.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Chemistry, Multidisciplinary
Wei Wen Wong, Naiyin Wang, Bryan D. D. Esser, Stephen A. A. Church, Li Li, Mark Lockrey, Igor Aharonovich, Patrick Parkinson, Joanne Etheridge, Chennupati Jagadish, Hark Hoe Tan
Summary: In this study, we utilize the selective area epitaxy method to deterministically engineer thousands of microring lasers on a single chip. By elucidating a detailed growth mechanism and controlling the adatom diffusion lengths, we achieve ultrasmooth cavity sidewalls. These engineered devices exhibit a tunable emission wavelength in the telecommunication O-band and show low-threshold lasing with high device efficacy across the chip. This work marks a significant milestone toward the implementation of a fully integrated III-V materials platform for next-generation high-density integrated photonic and optoelectronic circuits.
Article
Multidisciplinary Sciences
Feng Zhou, Hehe Gong, Ming Xiao, Yunwei Ma, Zhengpeng Wang, Xinxin Yu, Li Li, Lan Fu, Hark Hoe Tan, Yi Yang, Fang-Fang Ren, Shulin Gu, Youdou Zheng, Hai Lu, Rong Zhang, Yuhao Zhang, Jiandong Ye
Summary: In this study, NiO/Ga2O3 heterojunctions with smaller reverse recovery, higher switching speed, and a robustness competitive to that of conventional homojunctions were reported. Avalanche and surge robustness involve fundamental carrier dynamics under high electric field and current density, and are prerequisites for power devices in power electronics applications. The heterojunction formed between n-type gallium oxide and p-type nickel oxide breaks the trade-off between robustness and switching speed in conventional homojunctions, and removes a key hurdle to advance ultra-wide bandgap semiconductor devices for power industrial applications.
NATURE COMMUNICATIONS
(2023)
