4.8 Article

Universal Trapping Mechanism in Semiconductor Nanocrystals

期刊

NANO LETTERS
卷 13, 期 5, 页码 2047-2052

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nl4003014

关键词

Trapping surface; impurities; Auger processes; nanocrystal quantum dots; pseudopotential method

资金

  1. Royal Society under the URF scheme
  2. Campus de Excelencia Internacional of Universidad de Granada
  3. Spanish Ministerio de Ciencia e Innovacion [TEC2010-16211]

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Size tunability of the optical properties and inexpensive synthesis make semiconductor nanocrystals one of the most promising and versatile building blocks for many modern applications such as lasers, single-electron transistors, solar cells, and biological labels. The performance of these nanocrystal-based devices is however compromised by efficient trapping of the charge carriers. This process exhibits different features depending on the nanocrystal material, surface termination, size, and trap location, leading to the assumption that different mechanisms are at play in each situation. Here we revolutionize this fragmented picture and provide a unified interpretation of trapping dynamics in semiconductor nanocrystals by identifying the origins of this so far elusive detrimental process. Our findings pave the way for a general suppression strategy, applicable to any system, which can lead to a simultaneous efficiency enhancement in all nanocrystal-based technologies.

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