期刊
NANO LETTERS
卷 13, 期 5, 页码 2047-2052出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl4003014
关键词
Trapping surface; impurities; Auger processes; nanocrystal quantum dots; pseudopotential method
类别
资金
- Royal Society under the URF scheme
- Campus de Excelencia Internacional of Universidad de Granada
- Spanish Ministerio de Ciencia e Innovacion [TEC2010-16211]
Size tunability of the optical properties and inexpensive synthesis make semiconductor nanocrystals one of the most promising and versatile building blocks for many modern applications such as lasers, single-electron transistors, solar cells, and biological labels. The performance of these nanocrystal-based devices is however compromised by efficient trapping of the charge carriers. This process exhibits different features depending on the nanocrystal material, surface termination, size, and trap location, leading to the assumption that different mechanisms are at play in each situation. Here we revolutionize this fragmented picture and provide a unified interpretation of trapping dynamics in semiconductor nanocrystals by identifying the origins of this so far elusive detrimental process. Our findings pave the way for a general suppression strategy, applicable to any system, which can lead to a simultaneous efficiency enhancement in all nanocrystal-based technologies.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据