Self-Aligned, Extremely High Frequency III–V Metal-Oxide-Semiconductor Field-Effect Transistors on Rigid and Flexible Substrates

标题
Self-Aligned, Extremely High Frequency III–V Metal-Oxide-Semiconductor Field-Effect Transistors on Rigid and Flexible Substrates
作者
关键词
-
出版物
NANO LETTERS
Volume 12, Issue 8, Pages 4140-4145
出版商
American Chemical Society (ACS)
发表日期
2012-06-30
DOI
10.1021/nl301699k

向作者/读者发起求助以获取更多资源

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search