Structural and Electrical Characterization of Bi2Se3 Nanostructures Grown by Metal-Organic Chemical Vapor Deposition

We characterize nanostructures of Bi2Se3 that are grown via metal-organic chemical vapor deposition using the precursors diethyl selenium and trimethyl bismuth. By adjusting growth parameters, we obtain either single-crystalline ribbons up to 10 mu m long or thin micrometer-sized platelets. Four-terminal resistance measurements yield a sample resistivity of 4 m Omega.cm. We observe weak antilocalization and extract a phase coherence length 1(phi) = 178 nm and spin-orbit length l(so) = 93 nm at T = 0.29 K. Our results are consistent with previous measurements on exfoliated samples and samples grown via physical vapor deposition.