期刊
NANO LETTERS
卷 12, 期 10, 页码 5148-5154出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl303201w
关键词
Bragg projection ptychography; strain imaging; coherent X-ray diffraction imaging; silicon-on-insulator devices; SiGe heteroepitaxy
类别
资金
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-AC02-06CH11357, DE-SC0001805]
- U.S. DOE, Basic Energy Sciences, Materials Sciences and Engineering Division
We imaged nanoscale lattice strain in a multilayer semiconductor device prototype with a new X-ray technique, nanofocused Bragg projection ptychography. Applying this technique to the epitaxial stressor layer of a SiGe-on-SOI structure, we measured the internal lattice behavior in a targeted region of a single device and demonstrated that its internal strain profile consisted of two competing lattice distortions. These results provide the strongest nondestructive test to date of continuum modeling predictions of nanoscale strain distributions.
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