期刊
NANO LETTERS
卷 12, 期 6, 页码 3263-3267出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl301325h
关键词
indium arsenide; nanowire; spin orbit coupling; Rashba effect; ID weak anti-localization
类别
资金
- NSF [DMR-1151534]
- American Chemical Society [48800-DNI10]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1151534] Funding Source: National Science Foundation
A key concept in the emerging field of spintronics is the gate voltage or electric field control of spin precession via the effective magnetic field generated by the Rashba spin orbit interaction. Here, we demonstrate the generation and tuning of electric field induced Rashba spin orbit interaction in In As nanowires where a strong electric field is created by either a double gate or a solid electrolyte surrounding gate. In particular, the electrolyte gating enables 6-fold tuning of Rashba coefficient and nearly 3 orders of magnitude tuning of spin relaxation time within only 1 V of gate bias. Such a dramatic tuning of spin orbit interaction in devices.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据