期刊
NANO LETTERS
卷 12, 期 3, 页码 1121-1128出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl204263k
关键词
Nanowire; nanotube; heterostructures; silicon; germanium; electrical devices
类别
资金
- Legacy Foundation, ISF
One-dimensional (ID) nanostructures have attracted considerable attention as a result of their exceptional properties and potential applications. Among them, 1D axial heterostructures with well-defined and controlled heterojunctions between different nanomaterials or between different 1D nanostructures (i.e., nanowire-nanotube heterojunctions) have recently become of particular interest as potential building blocks in future high-performance nano-optoelectronic and nanoelectronic devices. Here, we report on the preparation and characterization of crystalline silicon nanowire-nanotube (SiNW-NT) heterostructures with controlled geometry, kinked and unkinked, and composition using germanium silicon nanowire heterostructures with abrupt heterojunctions (similar to 2 nm wide) as a template via the VLS-CVD mechanism.
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