期刊
NANO LETTERS
卷 11, 期 3, 页码 1276-1279出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl104316t
关键词
Nanowire; vapor-liquid-solid; heteroepitaxy; photoluminescence; minority carrier lifetime; deep recombination center
The incorporation of Au during vapor-liquid-solid nanowire growth might inherently limit the performance of nanowire-based devices. Here, we assess the material quality of Au-assisted and Au-free grown GaAs/(Al,Ga)As core-shell nanowires using photoluminescence spectroscopy. We show that at room temperature, the internal quantum efficiency is systematically much lower for the Au-assisted nanowires than for the Au-free ones. In contrast, the optoelectronic material quality of the latter is comparable to that of state-of-the-art planar double heterostructures.
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