期刊
NANO LETTERS
卷 11, 期 2, 页码 651-656出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl103773e
关键词
Silicon nanowires; boron; phosphorus; segregation behaviors; radial distribution
类别
资金
- Japan Science and Technology Agency (JST)
- World Premier International Research Center Initiative (WPI Initiative) on Materials Nanoarchitectonics (MANA)
- MEXT
- Innovation Research Project on Nanoelectronics Materials, Japan
Gaining an understanding the dynamic behaviors of dopant atoms in silicon nanowires (SiNWs) is the key to achieving low-power and high-speed transistor devices using SiNWs. The segregation behavior of boron (B) and phosphorus (P) atoms in B- and P-doped SiNWs during thermal oxidation was closely observed using B local vibrational peaks and Fano broadening in optical phonon peaks of B-doped SiNWs by micro-Raman scattering Electron spin resonance (ESR) signals from conduction electrons were used for P-doped SiNWs. Our results showed that B atoms preferentially segregate in the surface oxide layer, whereas P atoms tend to accumulate in the Si region around the interface of SiNWs. The radial distribution of P atoms in SiNWs was also investigated to prove the difference segregation behaviors between of P and B atoms.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据