Correction

Graphene-Silicon Schottky Diodes (vol 11, pg 1863, 2011)

NANO LETTERS (2011)

期刊

NANO LETTERS

卷 11, 期 11, 页码 5097-5097

出版社

AMER CHEMICAL SOC

DOI: 10.1021/nl203288r

关键词

-

类别

Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter

向作者/读者索取更多资源

Protocol

Reagent

作者

我是这篇论文的作者

点击您的名字以认领此论文并将其添加到您的个人资料中。

推荐

Article Chemistry, Multidisciplinary

Etch and Print: Graphene-Based Diodes for Silicon Technology

Alessandro Grillo, Zixing Peng, Aniello Pelella, Antonio Di Bartolomeo, Cinzia Casiraghi

Summary: This paper presents a simple and cost-effective method for fabricating printed graphene-silicon rectifying devices using inkjet printing. The devices exhibit a high ON/OFF ratio and significant photovoltaic effect, making them suitable for a wide range of electronic and optoelectronic applications.

ACS NANO (2023)

添加到收藏夹

Article Physics, Applied

Improved barrier homogeneity in Pt/Al0.75Ga0.25N Schottky barrier diodes by graphene interlayer

Junxue Ran, Rui He, Lulu Wang, Bingzhi Liu, Xiaoli Ji, Jingyu Sun, Junxi Wang, Jinmin Li, Tongbo Wei

Summary: Pt/Al0.75Ga0.25N Schottky barrier diodes (SBDs) with and without a graphene interlayer were fabricated and their electrical characteristics were analyzed. The results showed that the presence of the graphene interlayer improved the performance of the SBDs, leading to a higher barrier height and more uniform barrier distribution.

JOURNAL OF PHYSICS D-APPLIED PHYSICS (2022)

添加到收藏夹

Article Engineering, Electrical & Electronic

An Alternative to Compound Semiconductors Using a Si-Based IR Detector

Hong-Jhang Syu, Yu-Chieh Huang, Zih-Chun Su, Ruei-Lien Sun, Ching-Fuh Lin

Summary: By utilizing a Si-based Schottky junction and internal photoemission, the detection limit of a Si photodetector has been expanded from the bandgap wavelength of Si to the Schottky barrier wavelength of the metal/Si junction. The Schottky junction composed of Ag and n-type Si has a barrier height of 0.742 eV and a detection limit of 1670 nm. Factors such as metal thickness and device temperature have a significant impact on the device properties.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2022)

添加到收藏夹

Article Engineering, Electrical & Electronic

Graphene Nanofilms/Silicon Near-Infrared Avalanche Photodetectors

Lixiang Liu, Xiaoxue Cao, Xinyu Liu, Zhixiang Zhang, Xiaochen Wang, Yang Xu

Summary: This study demonstrates a high-performance near-infrared Schottky diode by integrating silicon with macroscopic assembled graphene nanofilms. The device exhibits intense light absorption, low work function, and long carrier lifetime, allowing for highly sensitive photodetection at 1870 nm with a fast response speed.

IEEE TRANSACTIONS ON NANOTECHNOLOGY (2022)

添加到收藏夹

Article Chemistry, Multidisciplinary

Solution Processed Schottky Diodes Enabled by Silicon Carbide Nanowires for Harsh Environment Applications

Kuan-Yu Chen, Prabhat K. Tripathy, Kunal Mondal, Hongliang Zhang, Adrien Couet, Joseph B. Andrews

Summary: Silicon carbide nanowires (SiC NWs) have the potential to enable the development of solution-processable electronics in harsh environments. The use of nanoscale SiC allows for dispersion in liquid solvents while retaining the resilience of bulk SiC. This study demonstrates the fabrication of SiC NW Schottky diodes and investigates their performance under elevated temperatures and proton irradiation, showing high-temperature tolerance and irradiation resistance.

NANO LETTERS (2023)

添加到收藏夹

Review Chemistry, Physical

Materials and Processes for Schottky Contacts on Silicon Carbide

Marilena Vivona, Filippo Giannazzo, Fabrizio Roccaforte

Summary: Silicon carbide (4H-SiC) Schottky diodes are important elements in power electronics applications. Understanding the metal/4H-SiC interface is crucial for improving the electrical properties of these devices. Over the past thirty years, significant efforts have been made to develop technology for 4H-SiC-based Schottky diodes. This review paper provides an overview of the fundamental properties and electrical characterization of metal/4H-SiC Schottky barriers, as well as the best-established materials and processing methods for fabricating Schottky contacts to 4H-SiC.

MATERIALS (2022)

添加到收藏夹

Article Engineering, Electrical & Electronic

Graphene/Si-Based Biosensor for Glioblastoma Cancer Cell Detection

Anousha Khamsavi, Yaser Abdi, Zahra Fekrirad, Ehsan Arefian

Summary: A glioblastoma cancer cell biosensor based on mono-layer graphene/(n-type)Si Schottky junction is proposed in this study. The sensor can distinguish different glioblastoma cancer cell lines and differentiate them from healthy cells, providing a new avenue for cancer cell detection and differentiation.

IEEE SENSORS JOURNAL (2022)

添加到收藏夹

Article Multidisciplinary Sciences

Ultrafast van der Waals diode using graphene quantum capacitance and Fermi-level depinning

Sungjae Hong, Chang-Ui Hong, Sol Lee, Myeongjin Jang, Chorom Jang, Yangjin Lee, Livia Janice Widiapradja, Sam Park, Kwanpyo Kim, Young-Woo Son, Jong-Gwan Yook, Seongil Im

Summary: Graphene has been widely used as an insertion layer in vertically stacked devices due to its excellent electrical tunabilities. However, its implications at ultrahigh frequencies have been rarely explored. In this study, diode operation of vertical Pt/n-MoSe2/graphene/Au assemblies at a cutoff frequency of about 200 GHz was demonstrated. The electric charge modulation by the inserted graphene becomes essentially frozen above a few GHz frequencies, transforming the Ohmic graphene/MoSe2 junction into a pinning-free Schottky junction. The diodes with graphene insertion exhibit much lower total capacitance and an order of magnitude higher cutoff frequency compared to devices without graphene, highlighting the significance of graphene at high frequencies.

SCIENCE ADVANCES (2023)

添加到收藏夹

Article Materials Science, Multidisciplinary

Changes in electrical properties and conduction mechanisms of Pd/n-Si diodes due to niobium dopant

M. J. Thebe, S. J. Moloi, M. Msimanga

Summary: The study revealed that the change in electrical properties of silicon diodes due to niobium doping is mainly attributed to a shift in charge distribution mechanism dominated by generation-recombination defect centers, which results in an increase in material resistivity. This suggests that niobium-induced defect centers are responsible for altering the electrical behavior of the diodes.

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS (2021)

添加到收藏夹

Review Nanoscience & Nanotechnology

Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics

Zhenxing Wang, Andreas Hemmetter, Burkay Uzlu, Mohamed Saeed, Ahmed Hamed, Satender Kataria, Renato Negra, Daniel Neumaier, Max C. Lemme

Summary: The manuscript reviews diodes made of heterostructures of the 2D material graphene and conventional 3D materials, highlighting their applications in high frequency electronics and optoelectronics. It discusses the advantages of metal-insulator-graphene diodes over conventional metal-insulator-metal diodes, and the potential for graphene-based diodes to outperform traditional photodetectors. However, tailored adjustments are needed for 2D/3D diodes based on specific application requirements.

ADVANCED ELECTRONIC MATERIALS (2021)

添加到收藏夹

Article Engineering, Electrical & Electronic

Wide-Bandgap Power Semiconductors for Electric Vehicle Systems: Challenges and Trends

Thang Van Do, Joao Pedro F. Trovao, Ke Li, Loic Boulon

Summary: Research on the application of wide-bandgap power semiconductor devices like SiC and GaN in electric vehicles has shown promising potential for improving efficiency, reliability, and mileage. Despite their advantages over traditional Si power semiconductors, challenges in packaging and power converter design remain to be addressed.

IEEE VEHICULAR TECHNOLOGY MAGAZINE (2021)

添加到收藏夹

Article Physics, Condensed Matter

The influence of manufacturing modes on the electrical and energy parameters of graphene/p-CdTe Schottky diodes

I. P. Koziarskyi, M. I. Ilashchuk, I. G. Orletskyi, D. P. Koziarskyi, L. A. Myroniuk, D. V. Myroniuk, A. I. Ievtushenko, E. V. Maistruk

Summary: The paper investigates the electrical properties of graphene/p-CdTe structures utilizing different durations of graphene films application on p-CdTe crystalline substrates. The formation of graphene layers is confirmed by Raman scattering spectra analysis, and the electrical properties depend on the duration of graphene films sputtering due to the thermally stimulated change in the equilibrium characteristics of the base material and the formation of a near-surface layer with an increased concentration of acceptor-type defects.

PHYSICA B-CONDENSED MATTER (2023)

添加到收藏夹

Article Engineering, Electrical & Electronic

The Optimization of 3.3 kV 4H-SiC JBS Diodes

Arne Benjamin Renz, Vishal Ajit Shah, Oliver James Vavasour, Guy William Clarke Baker, Yegi Bonyadi, Yogesh Sharma, Vasantha Pathirana, Tanya Trajkovic, Phil Mawby, Marina Antoniou, Peter Michael Gammon

Summary: The article discusses a comprehensive study optimizing the OFF- and ON-state characteristics of 3.3 kV junction barrier Schottky diodes. Different P-region widths and spacings were varied to enhance device performance, resulting in Ni and Mo devices with the narrowest pitch being the best performers with balanced device design and relatively low forward voltage drop.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2022)

添加到收藏夹

Correction Materials Science, Multidisciplinary

Correction: Electrical characteristics and photodetection mechanism of TiO2/AlGaN/GaN heterostructure-based ultraviolet detectors with a Schottky junction (vol 11, pg 1704, 2023)

Teng Zhan, Jianwen Sun, Tao Feng, Yulong Zhang, Binru Zhou, Banghong Zhang, Junxi Wang, Pasqualina M. Sarro, Guoqi Zhang, Zewen Liu, Xiaoyan Yi, Jinmin Li

Summary: This article investigates the electrical characteristics and photodetection mechanism of TiO2/AlGaN/GaN heterostructure-based ultraviolet detectors with a Schottky junction. A correction is made to provide more accurate and analyzed results.

JOURNAL OF MATERIALS CHEMISTRY C (2023)

添加到收藏夹

Article Materials Science, Multidisciplinary

Effects of silicon surface defects on the graphene/silicon Schottky characteristics

Hei Wong, Muhammad Abid Anwar, Shurong Dong

Summary: This study examined the adverse characteristics observed in the graphene/silicon Schottky junction and identified the important role of silicon surface defects, particularly P-b0 centers, in causing these characteristics. Additionally, it was found that graphene-covered silicon surfaces preserve a higher amount of P-b0 centers compared to other Si junctions or interfaces, contributing to the reported adverse current-voltage characteristics.

RESULTS IN PHYSICS (2021)

添加到收藏夹

Article Physics, Applied

Gate tunable graphene-silicon Ohmic/Schottky contacts

Chun-Chung Chen, Chia-Chi Chang, Zhen Li, A. F. J. Levi, Stephen B. Cronin

APPLIED PHYSICS LETTERS (2012)

添加到收藏夹

Article Engineering, Electrical & Electronic

Ring resonator-based photonic microwave receiver modulator with picowatt sensitivity

M. Hossein-Zadeh, A. F. J. Levi

IET OPTOELECTRONICS (2011)

添加到收藏夹

Article Chemistry, Multidisciplinary

Graphene-Silicon Schottky Diodes

Chun-Chung Chen, Mehmet Aykol, Chia-Chi Chang, A. F. J. Levi, Stephen B. Cronin

NANO LETTERS (2011)

添加到收藏夹

Article Nanoscience & Nanotechnology

Optimal design of a semiconductor heterostructure tunnel diode with linear current-voltage characteristic

Kelly C. Magruder, A. F. J. Levi

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES (2011)

添加到收藏夹

Article Nanoscience & Nanotechnology

Optimal design of heterostructure tunnel diode with nonlinear current-voltage characteristic

Kelly C. Magruder, A. F. J. Levi

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES (2012)

添加到收藏夹

Article Optics

Quantum fluctuations and saturable absorption in mesoscale lasers

Kaushik Roy-Choudhury, A. F. J. Levi

PHYSICAL REVIEW A (2011)

添加到收藏夹

Article Optics

Quantification and control of non-Markovian evolution in finite quantum systems via feedback

N. Chancellor, C. Petri, L. Campos Venuti, A. F. J. Levi, S. Haas

PHYSICAL REVIEW A (2014)

添加到收藏夹

Article Optics

Coherent control of non-Markovian photon-resonator dynamics

A. F. J. Levi, L. Campos Venuti, T. Albash, S. Haas

PHYSICAL REVIEW A (2014)

添加到收藏夹

Article Materials Science, Multidisciplinary

Quantum and semiclassical inelastic electron transport

Kelly C. Magruder, A. F. J. Levi

PHYSICAL REVIEW B (2010)

添加到收藏夹

Article Optics

Behavioral regimes and long-lived emitter states in mesolasers

Amine Abouzaid, Walter Unglaub, A. F. J. Levi

JOURNAL OF PHYSICS B-ATOMIC MOLECULAR AND OPTICAL PHYSICS (2019)

添加到收藏夹

Article Physics, Multidisciplinary

Supersymmetry with self-consistent Schrodinger-Poisson equations: finding partner potentials and breaking symmetry

Amine Abouzaid, A. F. J. Levi

Summary: Isospectral Hamiltonians and partner potentials can be found for self-consistent solutions of the Schrodinger and Poisson equations in the presence of identical non-interacting electrons. Perturbation by an external electric field can break symmetry and spectrally distinguish between states. Symmetry can also be broken by a change of electron density or temperature for a given pair of partner potentials.

NEW JOURNAL OF PHYSICS (2021)

添加到收藏夹

Article Engineering, Electrical & Electronic

Three-dimensional imaging of integrated circuits with macro- to nanoscale zoom

Mirko Holler, Michal Odstrcil, Manuel Guizar-Sicairos, Maxime Lebugle, Elisabeth Mueller, Simone Finizio, Gemma Tinti, Christian David, Joshua Zusman, Walter Unglaub, Oliver Bunk, Joerg Raabe, A. F. J. Levi, Gabriel Aeppli

NATURE ELECTRONICS (2019)

添加到收藏夹

Article Materials Science, Multidisciplinary

Nanoscale x-ray imaging of circuit features without wafer etching

Junjing Deng, Young Pyo Hong, Si Chen, Youssef S. G. Nashed, Tom Peterka, Anthony J. F. Levi, John Damoulakis, Sayan Saha, Travis Eiles, Chris Jacobsen

PHYSICAL REVIEW B (2017)

添加到收藏夹

Proceedings Paper Engineering, Electrical & Electronic

Photonic Microwave Down-Conversion Based on Linear Modulation and Filtering

Mani Hossein-Zadeh, A. F. J. Levi

2011 IEEE PHOTONICS CONFERENCE (PHO) (2011)

添加到收藏夹

暂无数据

© Peeref 2019-2024. All rights reserved.