4.8 Article

Tailoring the Vapor-Liquid-Solid Growth toward the Self-Assembly of GaAs Nanowire Junctions

期刊

NANO LETTERS
卷 11, 期 11, 页码 4947-4952

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nl202888e

关键词

Vapor-liquid-solid growth mechanism; monolithic nanowire junctions; transmission electron microscopy; polar interactions; electrostatic-mechanical modeling; nanowire arrays

资金

  1. NTU [M58110065, M58110092]
  2. French Embassy in Singapore [2.04.10]
  3. U.S. Department of Energy, Office of Basic Energy Sciences user facility at Los Alamos National Laboratory [DE-AC52-06NA25396]

向作者/读者索取更多资源

New insights into understanding and controlling the intriguing phenomena of spontaneous merging (kissing) and the self-assembly of monolithic Y- and T-junctions is demonstrated in the metal-organic chemical vapor deposition growth of GaAs nanowires. High-resolution transmission electron microscopy for determining polar facets was coupled to electrostatic-mechanical modeling and position-controlled synthesis to identify nanowire diameter, length, and pitch, leading to junction formation. When nanowire patterns are designed so that the electrostatic energy resulting from the interaction of polar surfaces exceeds the mechanical energy required to bend the nanowires to the point of contact, their fusion can lead to the self-assembly of monolithic junctions. Understanding and controlling this phenomenon is a great asset for the realization of dense arrays of vertical nanowire devices and opens up new ways toward the large scale integration of nanowire quantum junctions or nanowire intracellular probes.

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