4.8 Article

Transformable Functional Nanoscale Building Blocks with Wafer-Scale Silicon Nanowires

期刊

NANO LETTERS
卷 11, 期 2, 页码 854-859

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nl104212e

关键词

Silicon nanowire; field effect transistorjogic gates; address decoders; nanoelectromechanical systems

资金

  1. Korean government [2009-0083079]
  2. Ministry of Education, Science, and Technology [2009-0082583]

向作者/读者索取更多资源

Through the fusion of electrostatics. and mechanical dynamics, we demonstrate a transformable silicon nanowire, (SiNW) field effect transistor (FET) through a Wafer-scale top-down approach. By felicitously taking advantage of the proposed electrostatic SiNW-FET with mechanically movable SiNWs, all essential logic gates, including address decoders, can be monolithically integrated into a single device. The unification of various functional devices, such as pn-diodes, FETs, logic gates, and address decoders, can therefore eliminate the complex fabrication issues associated with nanoscale integration. These results represent a step toward the creation of multifunctional and flexible nanoelectronics.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据