期刊
NANO LETTERS
卷 11, 期 2, 页码 854-859出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl104212e
关键词
Silicon nanowire; field effect transistorjogic gates; address decoders; nanoelectromechanical systems
类别
资金
- Korean government [2009-0083079]
- Ministry of Education, Science, and Technology [2009-0082583]
Through the fusion of electrostatics. and mechanical dynamics, we demonstrate a transformable silicon nanowire, (SiNW) field effect transistor (FET) through a Wafer-scale top-down approach. By felicitously taking advantage of the proposed electrostatic SiNW-FET with mechanically movable SiNWs, all essential logic gates, including address decoders, can be monolithically integrated into a single device. The unification of various functional devices, such as pn-diodes, FETs, logic gates, and address decoders, can therefore eliminate the complex fabrication issues associated with nanoscale integration. These results represent a step toward the creation of multifunctional and flexible nanoelectronics.
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