期刊
NANO LETTERS
卷 10, 期 11, 页码 4475-4482出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl102308k
关键词
Nanowire; molecular beam epitaxy; wurtzite; zinc blonde; twin planes; GaAs
类别
资金
- SunFlake A/S
- Danish National Advanced Technology Foundation [002-2009-1]
- Danish Stategic Research Council [09-06573]
- Israeli Science Foundation [530/08]
- Israel Ministry of Science [3-66799]
Au free GaAs nanowires with zinc blende structure, free of twin planes and with remarkable aspect ratios, have been grown on (111) Si substrates by molecular beam epitaxy. Nanowires with diameters down to 20 nm are obtained using a thin native oxide layer on the Si substrates. We discuss how the structural phase distribution along the wire length is controlled by the effective V/III ratio and temperature at the growth interface and explain how to obtain a pure twin plane free zinc blende structure.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据