4.8 Article

Nonlithographic Patterning and Metal-Assisted Chemical Etching for Manufacturing of Tunable Light-Emitting Silicon Nanowire Arrays

期刊

NANO LETTERS
卷 10, 期 5, 页码 1582-1588

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nl903841a

关键词

Silicon nanowire; metal-assisted-chemical-etching (MacEtch); S4; light-emitting; sidewall roughness

资金

  1. National Science Foundation [0749028]
  2. Center for Nanoscale Chemical-Electrical-Mechanical Manufacturing Systems
  3. NSF [0747178]
  4. DOE [DEFG02-91-ER45439]
  5. Directorate For Engineering
  6. Div Of Civil, Mechanical, & Manufact Inn [0846771] Funding Source: National Science Foundation
  7. Directorate For Engineering
  8. Div Of Electrical, Commun & Cyber Sys [0747178] Funding Source: National Science Foundation
  9. Div Of Civil, Mechanical, & Manufact Inn
  10. Directorate For Engineering [0749028] Funding Source: National Science Foundation

向作者/读者索取更多资源

Semiconductor nanowires have potential applications in photovoltaics, batteries, and thermoelectrics. We report a top-down fabrication method that involves the combination of superionic-solid-state-stamping (S4) patterning with metal-assisted-chemicaletching (MacEtch), to produce silicon nanowire arrays with defined geometry and optical properties in a manufacturable fashion. Strong light emission in the entire visible and near infrared wavelength range at room temperature, tunable by etching condition, attributed to surface features, and enhanced by silver surface plasmon, is demonstrated.

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