4.8 Article

Band Alignment Tailoring of InAs1-xSbx/GaAs Quantum Dots: Control of Type I to Type II Transition

期刊

NANO LETTERS
卷 10, 期 8, 页码 3052-3056

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nl102237n

关键词

Quantum dot; band alignment; optical properties

资金

  1. DoD (NSSEFF) [N00244-09-1-0091]
  2. Irish Government
  3. European Commission [041985]
  4. Science Foundation Ireland [06/RFP/EWE014, 07/IN.1/1929]

向作者/读者索取更多资源

We report the growth of InAs1-xSbx self-assembled quantum dots (QDs) on GaAs (100) by molecular beam epitaxy. The optical properties of the QDs are investigated by photoluminescence (PL) and time-resolved photoluminescence (TRPL). A type I to type II band alignment transition is demonstrated by both power-dependent PL and TRPL in InAs1-xSbx QD samples with increased Sb beam flux. Results are compared to an eight-band strain-dependent k.p model incorporating detailed QD structure and alloy composition. The calculations show that the conduction band offset of InAs1-xSbx/GaAs can be continuously tuned from 0 to 500 meV and a flat conduction band alignment exists when 60% Sb is incorporated into the QDs. Our study offers the possibility of tailoring the band structure of GaAs based InAsSb QDs and opens up new means for device applications.

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