Effect of Top Dielectric Medium on Gate Capacitance of Graphene Field Effect Transistors: Implications in Mobility Measurements and Sensor Applications

标题
Effect of Top Dielectric Medium on Gate Capacitance of Graphene Field Effect Transistors: Implications in Mobility Measurements and Sensor Applications
作者
关键词
-
出版物
NANO LETTERS
Volume 10, Issue 12, Pages 5060-5064
出版商
American Chemical Society (ACS)
发表日期
2010-11-20
DOI
10.1021/nl103306a

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