4.8 Article

Single-Impurity Scattering and Carrier Mobility in Doped Ge/Si Core-Shell Nanowires

期刊

NANO LETTERS
卷 10, 期 6, 页码 2207-2210

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nl101109p

关键词

Core-shell nanowires; radial confinement; impurity scattering; carrier mobility

资金

  1. NRF of Korea [R01-2007-000-20922-0, 2009-0081204]
  2. Seoul Science Scholarship
  3. KISTI Supercomputing Center [KSC-2008-S02-0004]
  4. National Research Foundation of Korea [2009-0081204, 2007-0056606] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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We report electronic transport properties of doped Ge-core/Si-shell and Si-core/Ge-shell nanowires (NWs) from first-principles. We obtain single-impurity scattering properties of electrons and holes using density-functional methods For quantum conductance and then estimate charge-carrier mobilities considering multiple impurity scatterings. It is found that holes in the Ge-core/Si-shell NW with B-doped Si and electrons in the Si-core/Ge-shell NW with P-doped Ge have higher mobilities than holes and electrons in other chemical and doping configurations. These results reflect asymmetric radial confinements of charge carriers in the core shell NWs and show that Si-core/Ge-shell NWs with electron donors in the shell are as promising for nanoelectronic devices as Ge-core/Si-shell NWs with electron acceptors in the shell.

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