High-Speed Memory from Carbon Nanotube Field-Effect Transistors with High-κ Gate Dielectric

标题
High-Speed Memory from Carbon Nanotube Field-Effect Transistors with High-κ Gate Dielectric
作者
关键词
-
出版物
NANO LETTERS
Volume 9, Issue 2, Pages 643-647
出版商
American Chemical Society (ACS)
发表日期
2009-01-17
DOI
10.1021/nl8029916

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