Comparison of Epitaxial Graphene on Si-face and C-face 4H SiC Formed by Ultrahigh Vacuum and RF Furnace Production

标题
Comparison of Epitaxial Graphene on Si-face and C-face 4H SiC Formed by Ultrahigh Vacuum and RF Furnace Production
作者
关键词
-
出版物
NANO LETTERS
Volume 9, Issue 7, Pages 2605-2609
出版商
American Chemical Society (ACS)
发表日期
2009-06-09
DOI
10.1021/nl900803z

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