期刊
NANO LETTERS
卷 9, 期 11, 页码 3739-3742出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl9019243
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资金
- Austrian Science Fund [P20937-N14, L332-N16]
- Austrian Society for Micro- and Nanoelectronics
- Austrian Science Fund (FWF) [P20937] Funding Source: Austrian Science Fund (FWF)
- Austrian Science Fund (FWF) [P 20937] Funding Source: researchfish
In this letter, we report on the formation, of copper-germanide/germanium nanowire (NW) heterostructures with atomically sharp interfaces. The copper-germanide (Cu3Ge) formation process is enabled by a chemical reaction between metallic Cu pads and vapor-liquid-solid (VLS) grown Ge-NWs. The atomic scale aligned formation of the Cu3Ge segments is controlled by in situ SEM monitoring at 310 degrees C thereby enabling length control of the intrinsic Ge-NW down to a few nanometers. The single crystal Cu3Ge/Ge/Cu3Ge heterostructures were used to fabricate p-type Ge-NW field effect transistors with Schottky Cu3Ge source/drain contacts. Temperature dependent 1 IV measurements revealed the metallic properties of the CUM contacts with a maximum current density of 5 x 10(7) A/cm(2). According to the thermoionic emission theory, we determined an effective Schottky barrier height of 218 meV.
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