Molecular-beam epitaxy of heterostructures of wide-gap II–VI compounds for low-threshold lasers with optical and electron pumping

标题
Molecular-beam epitaxy of heterostructures of wide-gap II–VI compounds for low-threshold lasers with optical and electron pumping
作者
关键词
GaAs, ZnSe, Reflect High Energy Electron Diffraction, Laser Heterostructures, ZnSe Layer
出版物
SEMICONDUCTORS
Volume 49, Issue 3, Pages 331-336
出版商
Pleiades Publishing Ltd
发表日期
2015-03-04
DOI
10.1134/s1063782615030215

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