Mg doping and native N vacancy effect on electronic and transport properties of AlN nanowires
出版年份 2015 全文链接
标题
Mg doping and native N vacancy effect on electronic and transport properties of AlN nanowires
作者
关键词
N vacancy, Mg doping, electronic property, transport property, AlN nanowire
出版物
Science China-Technological Sciences
Volume 58, Issue 5, Pages 832-839
出版商
Springer Nature
发表日期
2015-03-17
DOI
10.1007/s11431-015-5796-1
参考文献
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