Article
Nanoscience & Nanotechnology
Timea Nora Torok, Janos Gergo Fehervari, Gabor Meszaros, Laszlo Posa, Andras Halbritter
Summary: Resistive switching memory devices have the potential to achieve artificial neural networks and nonconventional computing. Studying single resistive switching elements is crucial for utilizing their characteristics for computation. The variability of set time, the timespan before the transition from a high-resistance OFF state to a low-resistance ON state, is key to utilizing the inherent stochasticity of resistance switching. In this study, the set time statistics in nanometer-sized graphene-SiOx-graphene resistive switching memory devices were investigated. The study demonstrated a universal variance of logarithmic set time values, which is characteristic of a nucleation-driven crystallization process. The correlation between OFF state resistance and set time was observed and the tunability of set time statistics was explored by changing the reset amplitude parameter in sequential pulsed measurements. This phenomenon could be useful for controlling stochasticity in memristor-based probabilistic computing applications.
ACS APPLIED NANO MATERIALS
(2022)
Article
Materials Science, Multidisciplinary
Alok Ranjan, Hejun Xu, Chaolun Wang, Joel Molina, Xing Wu, Hui Zhang, Litao Sun, Junhao Chu, Kin Leong Pey
Summary: In this study, the resistive switching in hafnium dioxide (HfO2) and aluminum oxide (Al2O3) bilayered stacks was investigated using in-situ transmission electron microscopy and X-ray energy dispersive spectroscopy. The change in conductance of the HfO2/Al2O3 stack during electrical stressing is attributed to the formation of extended nanoscale defects at the HfO2/Al2O3 interface and the migration and re-crystallization of Al into the oxide bulk. Two competing physical mechanisms, oxygen ion redistribution and Al species migration, were found to be involved in the switching process. The low diffusion barrier of the active Al electrode causes severe Al migration in the bilayered oxides, leading to device failure in resetting and limiting overall switching performance and material reliability.
APPLIED MATERIALS TODAY
(2023)
Article
Chemistry, Multidisciplinary
Heebeom Ahn, Keehoon Kang, Younggul Song, Woocheol Lee, Jae-Keun Kim, Junwoo Kim, Jonghoon Lee, Kyeong-Yoon Baek, Jiwon Shin, Hyungbin Lim, Yongjin Kim, Jae Sung Lee, Takhee Lee
Summary: Organometal halide perovskites have shown potential as material systems for resistive memory devices due to their unique optical and electrical properties. Understanding the formation and structure of conducting filaments is crucial for stable operation of memory devices.
ADVANCED FUNCTIONAL MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Hae-In Kim, Taehun Lee, Yoonjin Cho, Sangwoo Lee, Won-Yong Lee, Kwangeun Kim, Jaewon Jang
Summary: In this study, sol-gel-processed Y2O3-Al2O3 mixed oxide-based RRAM devices were fabricated with different proportions of Y(2)O3 and Al2O3 precursors. The properties of the devices were investigated, and it was found that increasing the percentage of Al2O3 precursor led to reduced crystallinity and increased amorphous phase due to internal stress. Furthermore, the increase in Al2O3 percentage resulted in increased lattice oxygen percentage and decreased oxygen vacancy percentage. A 50% Y2O3-50% Al2O3 mixed oxide-based RRAM device showed the highest HRS/LRS ratio and demonstrated good endurance characteristics.
Article
Nanoscience & Nanotechnology
Yang Li, Wei Wang, Di Zhang, Maria Baskin, Aiping Chen, Shahar Kvatinsky, Eilam Yalon, Lior Kornblum
Summary: Resistive switching devices, utilizing a simple and scalable material system of conductive oxide interfaces, have been developed for memory and computation. These devices offer advantages in performance and energy efficiency, and the conductive oxide interface serves both as the bottom electrode and as a reservoir of defects for switching. This new device, based on scalable and CMOS-compatible fabrication processes, opens up new design possibilities.
ADVANCED ELECTRONIC MATERIALS
(2023)
Article
Physics, Applied
Asif Ali, Haider Abbas, Jiayi Li, Diing Shenp Ang
Summary: A double stacked monochalcogenide GeS-based CBRAM device with an IGZO buffer layer shows significantly improved resistive memory characteristics. The IGZO/GeS double layer provides the CBRAM with a sub-1V DC set/reset-voltage distributions (<+/- 0.1V variation). High endurance (>10(7) cycles) and retention (>10(5) s at 85 degrees C) performance are achieved. Understanding the RS mechanism based on the materials' properties and tailoring the device structure allow optimal control over variability, offering a facile means for mitigating CBRAM variability.
APPLIED PHYSICS LETTERS
(2023)
Article
Multidisciplinary Sciences
Sanchit Deshmukh, Miguel Munoz Rojo, Eilam Yalon, Sam Vaziri, Cagil Koroglu, Raisul Islam, Ricardo A. Iglesias, Krishna Saraswat, Eric Pop
Summary: Resistive random access memory (RRAM) is a crucial technology for digital storage and analog computing, relying on the formation and rupture of nanoscale conductive filaments. By using scanning thermal microscopy, researchers directly measure the temperature of these filaments and find that they can reach up to 1300 degrees C during steady-state operation, while electrode temperatures rarely exceed 350 degrees C. This highlights the importance of thermal engineering for nanoscale RRAM.
Article
Physics, Applied
Hongrong Hu, Alexander Scholz, Surya Abhishek Singaraju, Yushu Tang, Gabriel Cadilha Marques, Jasmin Aghassi-Hagmann
Summary: This study presents an inkjet-printed resistive switching device based on an Ag/ZnO/Au structure, exhibiting excellent performance and a stable conduction mechanism.
APPLIED PHYSICS LETTERS
(2021)
Article
Chemistry, Physical
Ankit Kumar Yadav, Chandra Prakash, Akhilesh Pandey, Ambesh Dixit
Summary: This study investigates the effects of different top electrodes (Cu, Ag, Al) on resistive random-access memory (RRAM) devices based on the active material Cu2ZnSnS4 (CZTS). It is found that the Ag top electrode exhibits relatively higher stability, with shape factors of 33.61 and 25.02 in the set and reset states, respectively. The transportation of charge carriers is explained through various methods, revealing that intrinsic copper ions dominate at lower applied electric fields in Cu/CZTS/ITO, while the top electrodes (Cu and Ag) dominate at higher electric fields. The diffusion of Cu+ and Ag+ is identified as the main source for resistive switching with Cu and Ag electrodes.
Article
Materials Science, Ceramics
Vikas Kumar Sahu, Amit Kumar Das, R. S. Ajimsha, Pankaj Misra
Summary: This study investigated the resistive and capacitive contributions in Cu/TiO2/Pt devices through impedance spectroscopic studies. The results showed that the capacitive contribution mainly came from the surrounding TiO2 bulk, while the gap formed by ruptured conductive filaments had negligible role. These findings are significant for improving the switching time and operating frequency performance of RRAM devices, as well as their applications in memory, RF switches, and neuromorphic computing.
CERAMICS INTERNATIONAL
(2023)
Article
Engineering, Electrical & Electronic
Erika Covi, Wei Wang, Yu-Hsuan Lin, Matteo Farronato, Elia Ambrosi, Daniele Ielmini
Summary: This article presents an extensive study of volatile resistive switching random access memory (RRAM) devices, focusing on the characterization of the electrical properties of Ag/SiOx-based devices and discussing their applicability in neuromorphic systems.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Chemistry, Physical
Ju Hwan Kang, Sukyung Choi, Yu Jung Park, Jin Sung Park, Nam Sung Cho, Shinuk Cho, Bright Walker, Dong Soo Choi, Jin-Wook Shin, Jung Hwa Seo
Summary: Cu/graphene hybrid films serve as both p-type and n-type transparent conducting electrodes in organic solar cells, with sheet resistance and work function being significantly improved by controlling the thickness of Cu. The films also exhibit wrinkle features and doubled RMS currents, while devices utilizing Cu/graphene electrodes show much higher power conversion efficiencies compared to those with pristine graphene electrodes.
Article
Engineering, Electrical & Electronic
Wei Wang, Erika Covi, Yu-Hsuan Lin, Elia Ambrosi, Alessandro Milozzi, Caterina Sbandati, Matteo Farronato, Daniele Ielmini
Summary: Understanding the switching and retention processes of the Ag-based metallic filamentary volatile resistive switching devices is crucial for optimizing their performance. The study reveals that the switching process can be modeled by ionic drift under electric field, while the retention process can be modeled by ionic diffusion along the filament surface driven by the gradient of surface atomic concentration. Further theoretical analysis unifies ionic drift and diffusion within the general Einstein relation, and the read voltage dependent retention time is explained by the competition between ionic drift and diffusion flux.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Materials Science, Ceramics
Qianying Zhu, Shenhou Li, Kangjia Hu, Xuewei Liang, Yangyang Cai, Zheng Liu, Yong Zhang
Summary: The study shows that during thermal cycling, ACTCA joints exhibit better mechanical properties and thermal cycling stability compared to ACT joints, primarily due to the role of the Cu interlayer.
CERAMICS INTERNATIONAL
(2021)
Article
Engineering, Electrical & Electronic
Amit Kumar Shringi, Atanu Betal, Satyajit Sahu, Mahesh Kumar
Summary: The effect of deposition temperature on the surface morphology and resistive switching properties of RF sputtered BaTiO3 thin films was investigated. It was found that the switching voltage decreased and the on-off ratio changed as the deposition temperature increased. The fabricated devices exhibited stable and reliable reading endurance and data retention characteristics.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2022)
