期刊
MICROSCOPY AND MICROANALYSIS
卷 17, 期 6, 页码 889-895出版社
CAMBRIDGE UNIV PRESS
DOI: 10.1017/S1431927611011974
关键词
focused ion beam; transmission electron microscope; sample preparation; double cross section; silicon; nanowire; semiconductor; gate-all-around; MOSFET; field effect transistor
The ability to prepare multiple cross-section transmission electron microscope (XTEM) samples from one XTEM sample of specific sub-10 nm features was demonstrated. Sub-10 nm diameter Si nanowire (NW) devices were initially cross-sectioned using a dual-beam focused ion beam system in a direction running parallel to the device channel. From this XTEM sample, both low- and high-resolution transmission electron microscope (TEM) images were obtained from six separate, specific site Si NW devices. The XTEM sample was then re-sectioned in four separate locations in a direction perpendicular to the device channel: 90 degrees from the original XTEM sample direction. Three of the four XTEM samples were successfully sectioned in the gate region of the device. From these three samples, low- and high-resolution TEM images of the Si NW were taken and measurements of the NW diameters were obtained. This technique demonstrated the ability to obtain high-resolution TEM images in directions 90 degrees from one another of multiple, specific sub-10 urn features that were spaced 1.1 mu m apart.
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