A new asymmetric 6T SRAM cell with a write assist technique in 65nm CMOS technology

标题
A new asymmetric 6T SRAM cell with a write assist technique in 65nm CMOS technology
作者
关键词
-
出版物
MICROELECTRONICS JOURNAL
Volume 45, Issue 11, Pages 1556-1565
出版商
Elsevier BV
发表日期
2014-10-11
DOI
10.1016/j.mejo.2014.09.006

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