期刊
MICROELECTRONIC ENGINEERING
卷 126, 期 -, 页码 169-172出版社
ELSEVIER
DOI: 10.1016/j.mee.2014.07.018
关键词
Resistive switching memory; Nickel nitride films; Surface roughness
资金
- National Research Foundation (NRF) of Korea - Korean Government (MEST) [2011-0028769]
- Leading Foreign Research Institute Recruitment Program [2013-044975]
- National Research Foundation of Korea [2011-0028769] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
In this study, we investigate the effect of the roughness height of bottom electrodes (BEs) on the resistive switching properties of a l x l platinum/nickel nitride/nickel (Pt/NiN/Ni) capacitor crossbar array (CBA) resistive random access memory (ReRAM) cell. The thickness of the rough surface is varied from 40 nm to 80 nm. In the resistive switching tests, the set voltage in the current voltage (I V) curves is reduced by using a rough surface (RS) BE in the Si wafer, and the reset current is reduced by increasing the surface roughness height of the Si wafer. On the other hand, there is a reduction in V-SET/RESET and I-SET/RESET variations in the I-V curves over 100 repetitive switching cycles when a surface roughness of 40 nm is employed. Further, for the CBA ReRAM, the current is the most stable when using the 40 nm-thick RS Si wafer at the high-resistance state and low-resistance state for 300,000 s in the retention test. These results show that use of the roughness substrate in the CBA ReRAM structure is effective in reducing variations in operating voltage and current. (C) 2014 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据