Effect of SiO2 tunnel layer processes on the characteristics of MONOS charge trap devices with poly-Si channels

标题
Effect of SiO2 tunnel layer processes on the characteristics of MONOS charge trap devices with poly-Si channels
作者
关键词
-
出版物
MICROELECTRONIC ENGINEERING
Volume 110, Issue -, Pages 6-11
出版商
Elsevier BV
发表日期
2013-04-27
DOI
10.1016/j.mee.2013.04.025

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