Reduction of silicon dioxide interfacial layer to 4.6Å EOT by Al remote scavenging in high-κ/metal gate stacks on Si

标题
Reduction of silicon dioxide interfacial layer to 4.6Å EOT by Al remote scavenging in high-κ/metal gate stacks on Si
作者
关键词
-
出版物
MICROELECTRONIC ENGINEERING
Volume 109, Issue -, Pages 109-112
出版商
Elsevier BV
发表日期
2013-03-26
DOI
10.1016/j.mee.2013.03.066

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