Article
Physics, Applied
Gourab Bhattacharya, A. Venimadhav
Summary: In this study, a new method was proposed to accurately extract the barrier height and ideality factor of back-to-back connected asymmetric Schottky diodes. The method predicts extremums in the measured current-voltage graph and combines them with a previously established theoretical approach to achieve accurate parameter extraction. Experimental results showed good agreement with other established methods.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Chemistry, Multidisciplinary
Kuan-Yu Chen, Prabhat K. Tripathy, Kunal Mondal, Hongliang Zhang, Adrien Couet, Joseph B. Andrews
Summary: Silicon carbide nanowires (SiC NWs) have the potential to enable the development of solution-processable electronics in harsh environments. The use of nanoscale SiC allows for dispersion in liquid solvents while retaining the resilience of bulk SiC. This study demonstrates the fabrication of SiC NW Schottky diodes and investigates their performance under elevated temperatures and proton irradiation, showing high-temperature tolerance and irradiation resistance.
Article
Engineering, Electrical & Electronic
Junho Jang, Jaeman Song, Seung S. Lee, Sangkwon Jeong, Bong Jae Lee, Sanghyeon Kim
Summary: In this study, the current-voltage characteristics of Au/n-GaSb Schottky diodes were analyzed to investigate their current transport mechanisms at different temperatures. The study separated the measured I-V curves into thermionic emission current and secondary current, identifying the predominance between tunneling and SRH recombination currents. It was also revealed that other current transport mechanisms such as Auger and radiative recombination, and leakage currents are negligible for the Au/n-GaSb Schottky diodes in this work.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2021)
Article
Chemistry, Physical
Mehdi Rahmani, Sonia Amdouni, Mohamed-ali Zaibi, Abdelaziz Meftah
Summary: The silicon nanowires were obtained using Ag-assisted chemical etching method on p-Si (100) substrate in two-step process. The etching duration was found to influence the morphological, optical, and electrical properties of the samples. The Ag/SiNWs/Si Schottky diodes exhibited rectifying behavior with specific characteristics such as ideality factor and threshold voltage.
Article
Engineering, Electrical & Electronic
Jyi-Tsong Lin, Hong-Syue Ho
Summary: This article presents a novel heterostructure tunnel field-effect transistor with a Schottky contact drain and a gate over the source metal overlap. It achieves higher tunneling probability and subthreshold swing with a complete gate to-source metal overlap. The proposed hetero Ge-GaAs structure mitigates the drawbacks of a Ge-only structure and suppresses leakage current and trap-assisted tunneling effect. The experimental results demonstrate that this transistor is suitable for ultralow-power Internet of Things applications.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Physics, Applied
Z. P. Wang, H. H. Gong, X. X. Yu, T. C. Hu, X. L. Ji, F. -F. Ren, S. L. Gu, Y. D. Zheng, R. Zhang, J. D. Ye
Summary: This study investigates the relationship between trap inhomogeneity within beta-Ga2O3 and the conversion of Shockley-Read-Hall (SRH) recombination in NiO/beta-Ga2O3 p(+)-n heterojunction diodes. The analysis identifies near-surface traps E2 and E3, as well as bulk traps E2*, and shows that carrier transport under forward bias is mainly governed by trap-assisted tunneling through the E3 traps with high recombination rates. The elimination of near-surface traps leads to improved diode performance and enables the development of high-performance power rectifiers.
APPLIED PHYSICS LETTERS
(2023)
Article
Physics, Applied
Sayleap Sdoeung, Kohei Sasaki, Katsumi Kawasaki, Jun Hirabayashi, Akito Kuramata, Toshiyuki Oishi, Makoto Kasu
Summary: Line-shaped defects were observed in halide vapor-phase epitaxial (001) beta-Ga2O3 SBDs, and these defects were found to be related to the reverse leakage current. Atomic force microscopy observation and simulation results showed that the formation of line-shaped defects originated from a dislocation network near the crystal surface.
APPLIED PHYSICS LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Ping-Yi Hsieh, Barry O'Sullivan, Artemisia Tsiara, Brecht Truijen, Pieter Lagrain, Lennaert Wouters, Didit Yudistira, Bernardette Kunert, Joris Van Campenhout, Ingrid De Wolf
Summary: A new compact model has been developed to accurately describe the forward-biased current-voltage characteristic of electrical contacts to Ge and GaAs layers in active silicon photonic components by incorporating bias-dependent Schottky barrier height. This model allows for direct evaluation of contact doping concentration and effective barrier height in semiconductor diodes with single-sided Schottky contact, and the extracted parameters agree well with experimental results. The study of process variabilities and design impacts provides insights for future improvements in realizing Ohmic contacts.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
S. Duman, A. Turut, S. Dogan
Summary: The thermal sensitivity of annealed and un-annealed Ni/n-6 H-SiC Schottky barrier diodes was studied. The results showed that the un-annealed diode exhibited linear behavior in a certain range of current levels, while the annealed diode did not. This was attributed to the formation of an inhomogeneous layer at the Ni/n-6 H-SiC interface due to thermal annealing.
SENSORS AND ACTUATORS A-PHYSICAL
(2022)
Article
Engineering, Electrical & Electronic
Sung-Wei Huang, Jenn-Gwo Hwu
Summary: In this study, the steady-state and transient behavior of metal-insulator-semiconductor tunnel diodes with high-low (H/L) oxide layers were investigated through experiments and simulations. The use of H/L oxide layers was found to reduce leakage or tunneling current at reverse bias by reducing minority carrier density near the gate edge. Characteristics of devices with various parameters were studied to identify conditions for tunneling current reduction, leading to enhanced transient current and capacitance change. The simulation confirmed the observed phenomena, including the existence of lateral electron current flow reducing minority carrier density near the gate edge. A memory operation using the H/L device showed improved read current and stable performance, making it a potential future volatile memory application.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Chemistry, Multidisciplinary
K. P. Mithun, Shalini Tripathi, Ahin Roy, N. Ravishankar, A. K. Sood
Summary: We investigated carrier relaxation dynamics in semiconducting tellurium nanowires using ultrafast time-resolved terahertz spectroscopy. The relaxation process was found to exhibit bi-exponential decay with two time scales depending on the amount of capping agent on the TeNWs surface. A coupled rate equation model was used to quantitatively understand the relaxation mechanisms and the observed temperature-dependent dynamics. Furthermore, the frequency-dependent THz photoconductivity was modeled using the Boltzmann transport equation, revealing the contributions of short range and Coulomb scattering rates in the relaxation process.
Article
Physics, Applied
Hasan Efeoglu, Abdulmecit Turut
Summary: In this study, Schottky barrier diodes with different metal compositions were fabricated and their thermal sensitivity was measured through V-T characteristics. The results indicate that SBDs with a copper Schottky contact have approximately the same thermal sensitivity coefficient at different current levels.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Chemistry, Multidisciplinary
Yujie Huang, Jing Yang, Degang Zhao, Yuheng Zhang, Zongshun Liu, Feng Liang, Ping Chen
Summary: The dark leakage current of AlxGa1-xN Schottky barrier detectors with different Al contents was investigated. It was found that the dark leakage current increased with increasing Al content. XRD and SIMS results showed no significant difference in dislocation density and carbon impurity concentration among the samples, indicating that they were not the main reason for the difference in dark leakage current. However, positron annihilation results revealed an increase in vacancy defect concentration with increasing Al content, which was consistent with the increase in dark leakage current. This discovery is important for accurately controlling the performance of AlxGa1-xN detectors.
Article
Engineering, Electrical & Electronic
Hong-Jhang Syu, Yu-Chieh Huang, Zih-Chun Su, Ruei-Lien Sun, Ching-Fuh Lin
Summary: By utilizing a Si-based Schottky junction and internal photoemission, the detection limit of a Si photodetector has been expanded from the bandgap wavelength of Si to the Schottky barrier wavelength of the metal/Si junction. The Schottky junction composed of Ag and n-type Si has a barrier height of 0.742 eV and a detection limit of 1670 nm. Factors such as metal thickness and device temperature have a significant impact on the device properties.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Nanoscience & Nanotechnology
Keita Funayama, Jun Hirotani, Atsushi Miura, Hiroya Tanaka, Yutaka Ohno, Yukihiro Tadokoro
Summary: In this study, a carbon nanotube-based field emission nanoscale diode was proposed and demonstrated, allowing for easy fabrication and individual tunability of multiple CNT diodes on the nanoscale on the same substrate in a one-time process. The nanodiode also enables adjustment of the turn-on voltage from 1 to 2.4 V by varying the surface area of the anode, showing potential for developing carbon-based nanoelectronic systems and demonstrating basic logic gates on a CNT-based fundamental logic gates.
Article
Computer Science, Artificial Intelligence
Xi Wang, Yu Zhao, Guangping Zeng, Peng Xiao, Zhiliang Wang
Summary: This research applies machine learning technology to the Satir theory model, intelligently classifying communication stances based on language and behavior information. By collecting dialogue language materials and utilizing a Chinese word segmentation system, a psychological consultation database was created. Training sets were constructed using speech filtering, text word vectorization, and annotation with the Satir model. Experimental results show high success rates in classifying four inconsistent coping stances.
JOURNAL OF EXPERIMENTAL & THEORETICAL ARTIFICIAL INTELLIGENCE
(2023)
Article
Plant Sciences
Sen Shi, YinXiang Gao, Chunying Li, Jingjing Zhang, Jiajing Guan, Chunjian Zhao, Yujie Fu
Summary: Root exudates and extracts from Taxus chinensis var. mairei contain four chemicals that promote the growth of Camptoteca acuminata seedlings. These chemicals are also related to soil properties, enzyme activities, and microbial community.
JOURNAL OF PLANT INTERACTIONS
(2022)
Review
Genetics & Heredity
Xiaoyue Zhang, Zhenzhong Wang, Shengqiang Ge, Yuanyuan Zuo, Haodong Lu, Yan Lv, Naijun Han, Yumei Cai, Xiaodong Wu, Zhiliang Wang
Summary: This review summarizes studies on attenuated strains of African swine fever virus obtained through cell passage over the last 60 years, aiming to provide inspiration for future vaccine design.
Article
Engineering, Environmental
Yijian Li, Jiyu Cui, Qingju Wang, Lifeng Yang, Liyuan Chen, Huabin Xing, Xili Cui
Summary: By utilizing the adaptive nano-traps of hybrid porous material ZU-61, the responsive shape recognition of styrene over ethylbenzene was achieved for the first time based on conformational differences caused by different substituent groups, demonstrating excellent separation selectivity.
CHEMICAL ENGINEERING JOURNAL
(2023)
Article
Computer Science, Software Engineering
Tao Xu, Xinheng Wang, Xie Lun, Hang Pan, Zhiliang Wang
Summary: With the global aging problem becoming more serious, the initial screening for Alzheimer's disease (AD) is increasingly important. This study attempts to establish a facial video-based AD recognition dataset through a human-computer interaction method, and analyzes and evaluates this dataset.
COMPUTER ANIMATION AND VIRTUAL WORLDS
(2023)
Article
Nursing
Jiang-Ping Chen, Yu-Mei Dai, Yong Qin, Sheng-Peng Liang, Gen Cheng, Yang Liu, Cheng-Zu Yang, Hong-Gu He, Qu Shen
Summary: This study aimed to explore the correlation among turnover intention, emotional intelligence, and job burnout in male nurses and identify the influencing factors. The results revealed a weak negative correlation between turnover intention and emotional intelligence, a moderate positive correlation between turnover intention and job burnout, and a moderate negative correlation between emotional intelligence and job burnout. Factors such as job burnout, young age, lack of interest in nursing, and working in the emergency department significantly affected turnover intention among male nurses. The study also highlighted the relationships between turnover intention, emotional intelligence, and job burnout.
INTERNATIONAL NURSING REVIEW
(2023)
Article
Chemistry, Multidisciplinary
Yixuan Zhu, Yu Zhou, Lu Ren, Jingyao Ye, Haichuan Wang, Xinyuan Liu, Ruiyun Huang, Haojie Liu, Junyang Liu, Jia Shi, Peng Gao, Wenjing Hong
Summary: The charge transport through single-molecule electronic devices can be mechanically controlled by changing the molecular geometrical configuration in situ, achieving conductance variations of more than four orders of magnitude. This is achieved by switching between constructive and destructive quantum interference pathways through designing molecules with multiple anchoring groups and shifting the electrodes within a range of about 0.6 nm. The tunable conductance range achieved using this mechanical tuning strategy is the highest reported so far.
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
(2023)
Article
Engineering, Environmental
Yujiao Xiahou, Junyang Liu, Junrong Zheng, Jun Yi, Dayang Wang, Haibing Xia
Summary: Macroscopically monocrystalline, self-assembled monolayers (M2-SAM) of gold nanoparticles coated with oleylamine (Au@OLA NPs) are achieved by optimizing their surface charges. The resulting M2-SAM of Au@OLA NPs exhibit unconventional Moire ' patterns beyond the imaging limit of scanning electron microscopy. The mono-crystallinity enables the M2-SAM to be used as SERS substrates for quantitative analysis and fabricate high precision and broad measurement span temperature sensors.
CHEMICAL ENGINEERING JOURNAL
(2023)
Article
Computer Science, Hardware & Architecture
Shicheng Wang, Menghao Zhang, Guanyu Li, Chang Liu, Zhiliang Wang, Ying Liu, Mingwei Xu
Summary: Multi-string pattern matching is crucial for network security applications but often becomes a performance bottleneck. Existing solutions cannot keep up with the increasing network bandwidth and traffic demands. In this paper, we propose BOLT, a scalable and cost-efficient multi-string pattern matching system leveraging programmable switches. Extensive evaluations show that BOLT achieves high throughput and scalability with various pattern sets and workloads.
IEEE-ACM TRANSACTIONS ON NETWORKING
(2023)
Article
Chemistry, Physical
Xingzhou Yang, Songjun Hou, Meiling Su, Qian Zhan, Hanjun Zhang, Sergio M. Quintero, Xiaodong Liu, Junyang Liu, Wenjing Hong, Juan Casado, Qingqing Wu, Colin J. Lambert, Yonghao Zheng
Summary: It is found that the transport properties of a series of fluorene derivatives can be tuned by controlling the degree of localization of certain orbitals, leading to a significant enhancement in conductance. This new understanding of the role of radicals in single-molecule junctions opens up a novel design strategy for single-molecule-based spintronic devices.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2023)
Article
Chemistry, Physical
Haojie Liu, Lijue Chen, Hao Zhang, Zhangqiang Yang, Jingyao Ye, Ping Zhou, Chao Fang, Wei Xu, Jia Shi, Junyang Liu, Ye Yang, Wenjing Hong
Summary: Researchers developed a single-molecule photoelectron tunnelling spectroscopy approach to map the transmission spectrum beyond the HOMO-LUMO gap. This is important for understanding and controlling charge transport in molecular devices and materials.
Article
Multidisciplinary Sciences
Chun Tang, Thijs Stuyver, Taige Lu, Junyang Liu, Yiling Ye, Tengyang Gao, Luchun Lin, Jueting Zheng, Wenqing Liu, Jia Shi, Sason Shaik, Haiping Xia, Wenjing Hong
Summary: By utilizing a strategy of redox control and electric field modulation, we successfully achieve single-molecule control of a keto-enol equilibrium at room temperature. Through the control of charge injection in the single-molecule junction, we can access charged potential energy surfaces with opposite thermodynamic driving forces, preferentially favoring the conducting enol form and significantly reducing the isomerization barrier. This allows us to selectively obtain desired and stable tautomers, leading to significant modulation of the single-molecule conductance. This work highlights the concept of single-molecule control of chemical reactions on multiple potential energy surfaces. Keto-enol tautomerism offers a promising platform for modulating charge transport at the nanoscale.
NATURE COMMUNICATIONS
(2023)
Article
Chemistry, Multidisciplinary
Tengyang Gao, Abdalghani Daaoub, Zhichao Pan, Yong Hu, Saisai Yuan, Yaoguang Li, Gang Dong, Ruiyun Huang, Junyang Liu, Sara Sangtarash, Jia Shi, Yang Yang, Hatef Sadeghi, Wenjing Hong
Summary: Supramolecular radical chemistry is an emerging field that combines supramolecular chemistry and radical chemistry. This study demonstrates the fabrication and charge transport properties of a supramolecular radical junction. The results show that the conductance of the supramolecular radical junction is significantly higher than that of a junction without a radical and even higher than that of a fully conjugated oligophenylenediamine molecule. The research reveals that the radical increases the binding energy and decreases the energy gap, enabling efficient transport through the supramolecular radical.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
(2023)
Article
Chemistry, Multidisciplinary
Xiaohui Li, Yan Zheng, Yu Zhou, Zhiyu Zhu, Jiayi Wu, Wenhui Ge, Yuxuan Zhang, Yuqing Ye, Lichuan Chen, Jia Shi, Junyang Liu, Jie Bai, Zitong Liu, Wenjing Hong
Summary: This study investigates the charge transport in supramolecular transistors and demonstrates the configuration-dependent quantum interference effects. It reveals the potential of supramolecular channels for molecular electronics and provides a fundamental understanding of intermolecular charge transport.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
(2023)
Article
Chemistry, Multidisciplinary
Li-Chuan Chen, Jie Shi, Zhi-Xing Lu, Rong-Jian Lin, Tai-Ge Lu, Yu-Ling Zou, Qing-Man Liang, Ruiyun Huang, Jia Shi, Zong-Yuan Xiao, Yanxi Zhang, Junyang Liu, Yang Yang, Wenjing Hong
Summary: This study developed a strategy for fabricating photoresponsive devices with high reversibility using transition metal dichalcogenides (TMDCs) electrodes and thiol azobenzene self-assembled monolayers (SAMs). The coupling strength between the molecule and the TMDCs electrodes decreased, leading to improved reversibility of the molecular photoswitches.
Article
Engineering, Electrical & Electronic
Bruno Galizia, Patrick Fiorenza, Corrado Bongiorno, Bela Pecz, Zsolt Fogarassy, Emanuela Schiliro, Filippo Giannazzo, Fabrizio Roccaforte, Raffaella Lo Nigro
Summary: This study demonstrates the growth of oriented AlN thin films on 4H-SiC substrates using PE-ALD technique, and investigates the impact of NH3 plasma pulsing on the microstructure and orientation degree of the AlN layers. The structural characterization reveals different polymorphic structures depending on the NH3 plasma pulsing time, and electrical nanoscopic characterization shows a correlation between the AlN crystalline phases and the insulating properties.
MICROELECTRONIC ENGINEERING
(2024)
Article
Engineering, Electrical & Electronic
Theo Levert, Alter Zakhtser, Julien Duval, Chloe Raguenez, Stephane Verdier, Delphine Le Cunff, Jean-Herve Tortai, Bernard Pelissier
Summary: In this study, the robustness of optical constants and optical band gap determination of three different materials is compared using a combination of spectroscopic ellipsometry and energy loss signal of X-ray photoelectron spectroscopy. The hybridization of these two techniques provides a new robust method for determining the band gap of the studied materials and other optical properties over a wide energy range.
MICROELECTRONIC ENGINEERING
(2024)
