Back-end-of-line compatible Conductive Bridging RAM based on Cu and SiO2

标题
Back-end-of-line compatible Conductive Bridging RAM based on Cu and SiO2
作者
关键词
-
出版物
MICROELECTRONIC ENGINEERING
Volume 88, Issue 5, Pages 814-816
出版商
Elsevier BV
发表日期
2010-06-24
DOI
10.1016/j.mee.2010.06.041

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