Bipolar resistive switching effect in Gd2O3 films for transparent memory application

标题
Bipolar resistive switching effect in Gd2O3 films for transparent memory application
作者
关键词
-
出版物
MICROELECTRONIC ENGINEERING
Volume 88, Issue 7, Pages 1586-1589
出版商
Elsevier BV
发表日期
2010-11-18
DOI
10.1016/j.mee.2010.11.021

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