Stack engineering of TANOS charge-trap flash memory cell using high-κ ZrO2 grown by ALD as charge trapping layer

标题
Stack engineering of TANOS charge-trap flash memory cell using high-κ ZrO2 grown by ALD as charge trapping layer
作者
关键词
-
出版物
MICROELECTRONIC ENGINEERING
Volume 88, Issue 7, Pages 1174-1177
出版商
Elsevier BV
发表日期
2011-04-15
DOI
10.1016/j.mee.2011.03.066

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