4.4 Article

Enhancement of photo- and electro-luminescence of GaN-based LED structure grown on a nanometer-scaled patterned sapphire substrate

期刊

MICROELECTRONIC ENGINEERING
卷 88, 期 11, 页码 3207-3213

出版社

ELSEVIER SCIENCE BV
DOI: 10.1016/j.mee.2011.07.014

关键词

Nanoimprint lithography (NIL); GaN-based light-emitting diodes (LEDs); Nanometer-scaled patterned sapphire; substrate (NPSS); Photoluminescence (PL); Electroluminescence (EL)

资金

  1. Ministry of Knowledge and Economy (MKE)
  2. MKE/IITA [2009-F-025-01]
  3. Korea Evaluation Institute of Industrial Technology (KEIT) [2008EAPHMP090000, 2009-F-025-01] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
  4. National Research Foundation of Korea [과C6A2001] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

In this study, a 2 in. sized a highly periodic nanometer-scaled patterned sapphire substrate (NPSS) was fabricated using nanoimprint lithography (NIL) and inductively coupled plasma etching to improve the light-extraction efficiency of GaN-based light-emitting diodes (LEDs). A blue LED structure was grown on the nanometer-scale patterned sapphire substrates, and the photoluminescence (PL) and electroluminescence (EL) were measured to confirm the effectiveness of the nanometer-scaled patterns on sapphire. An improvement in luminescence efficiency was observed when NPSS was applied; 2 times stronger PL intensity and 2.8 times stronger EL intensity than the LED structure grown on the unpatterned sapphire wafers were measured. These results show highly periodic nanometer-scaled patterns create multi-photon scattering and effectively enhance the light-extraction efficiency of LEDs. (C) 2011 Elsevier B.V. All rights reserved.

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