Article
Physics, Multidisciplinary
Devendra Kumar, Chiranji Lal, Dharm Veer, Deshraj Singh, Pawan Kumar, Ram S. Katiyar
Summary: CdSe and CdSe:Te thin films were grown on glass substrates by RF magnetron sputtering. The doping percentage of Tellurium (Te) in CdSe was 7% for the CdSe:Te thin film. The microscopic images of the films were found to be uniform and homogeneous in nature with a uniform grain and no cracks, and the grain size of CdSe was higher than CdSe:Te thin film. CdSe:Te thin film shows a higher absorption coefficient compared to CdSe in the visible region. The Energy band gaps were found to be 2.01 and 1.73 eV for CdSe and CdSe:Te thin films, respectively. The incorporation of Te atom into the CdSe structure has enhanced the mobility and changed the type of conductivity from n-type to p-type.
Article
Materials Science, Ceramics
Mingdi Lan, Shang Sun, Shiying Liu, Guojian Li, Zhiwei Wang, Qiang Wang
Summary: The shape of the hexagonal structure in Bi0.5Sb1.5Te3 film can be controlled through adjusting the magnetron sputtering parameters, leading to a dense layered structure that enhances the thermoelectric properties.
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
(2023)
Article
Chemistry, Physical
Daniel Bourgault, Hajar Hajoum, Sebastien Pairis, Olivier Leynaud, Richard Haettel, Jean Francois Motte, Olivier Rouleau, Eric Alleno
Summary: We have achieved a significant improvement in the electronic transport properties of the Fe2VAl Heusler alloy in thin-film form through a co-sputtering process. By depositing at temperatures close to 873 K and tuning the composition using co-sputtering, we have obtained a record power factor of up to 5.6 mW/K2m for n-type films. We also investigate the influence of co-sputtering conditions on atomic composition and the substrate effect on electronic transport properties.
ACS APPLIED ENERGY MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Guangyu Han, Wei Zhu, Siming Guo, Jie Zhou, Yutong Liu, Yuan Deng
Summary: A combinatorial high-throughput optimization solution is proposed for parallel screening and optimizing of composition and microstructure of thermoelectric materials. Using two different high-throughput fabrication methods and a new portable multiple discrete masks based platform, researchers successfully prepared a Bi2Te3-xSex thin film library and investigated the relationship between microstructure, process, and thermoelectric performance. Through high-throughput screening, a Bi2Te2.9Se0.1 film with a peak zT value of 1.303 at 353 K and a high average zT value of 1.047 in the range from 313 to 523 K was obtained. This method can be extended to the discovery of other functional thin films for material optimization.
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
(2023)
Article
Chemistry, Multidisciplinary
Zhenxue Zhang, Mikdat Gurtaran, Xiaoying Li, Hio-Ieng Un, Yi Qin, Hanshan Dong
Summary: In this study, N-type and P-type BiTe-based thin films were deposited on silicon, glass, and Kapton HN polyimide foil using magnetron sputtering technique. The morphology, microstructure, and phase constituents of the thin films were characterized by SEM/EDX, XRD, and TEM. The electrical conductivity, thermal conductivity, and Seebeck coefficient were measured by an advanced in-plane test system. The power output (open-circuit voltage and electric current) of the thin films was measured at different temperature gradients using a custom-built apparatus. The impact of deposition parameters and the dimensions of the thin films on the power output were investigated to optimize the thin-film flexible TE device for thermal energy harvesting.
Article
Materials Science, Multidisciplinary
Fariba Moshtaghi, Mardali Yousefpour, Ali Habibolahzadeh
Summary: Polyaniline-Bi-Sb-Te-Se thin films were fabricated on aluminum substrate using electrodeposition and electrochemical reaction method. The structure and morphology of the films were analyzed by FTIR, XRD, FE-SEM, and EDS. The electrical and thermoelectric properties of the films were evaluated, and it was found that the chemical composition and applied potential greatly influenced the thermoelectric properties. Furthermore, a slight change in the chemical compound improved the thermoelectric properties by approximately 65%.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Farbod Amirghasemi, Sam Kassegne
Summary: This study investigated the surface topography, crystalline structure, and electrical properties of sputtered thin films of antimony telluride and bismuth telluride on silicon and polymer substrates. The results show that increasing the RF sputtering power significantly improved the crystallinity, conductivity, and Seebeck coefficient of the thin films. The study provides insights into the effects of sputtering power and substrate on the material properties of thermoelectric materials.
JOURNAL OF ELECTRONIC MATERIALS
(2021)
Article
Chemistry, Multidisciplinary
Pedro Centeno, Miguel Alexandre, Filipe Neves, Elvira Fortunato, Rodrigo Martins, Hugo Aguas, Manuel J. Mendes
Summary: The increasing energy demand and efficiency bottleneck of monocrystalline silicon solar cell technology are driving the research and development of alternative photovoltaic materials. Copper-arsenic-sulfide (CAS) compounds are promising p-type absorber candidates for solar cells due to their availability, suitable bandgap, and high absorption coefficient. This comprehensive study explores the structural and optoelectronic properties of CAS thin-films deposited via radio-frequency magnetron co-sputtering, using both a commercial Cu target and a Cu-As-S target with material sourced from local mines in Portugal. The results show the potential application of CAS films as wide-bandgap semiconductors in third-generation photovoltaic devices.
Article
Chemistry, Physical
Liangliang Yang, Jiangtao Wei, Yuanhao Qin, Lei Wei, Peishuai Song, Mingliang Zhang, Fuhua Yang, Xiaodong Wang
Summary: Thermoelectric technology offers advantages such as quiet operation, zero emissions, and long life, but its large-scale application is limited by the lower thermoelectric performance factor (ZT). By growing Cu2Se thin films using magnetron sputtering, researchers achieved high conductivity and ZT values. This work lays the foundation for further research on nano-thin-film thermoelectrics.
Article
Materials Science, Composites
Yudong Liang, Yan Xiong, Jiajia Zheng, Zuoxiang Xie, Chao Chen, Ling Xu
Summary: This research investigates the thermoelectric properties of Tellurium (Te) and Poly(3,4ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) hybrid composite thin film as well as double-layer structured of PEDOT/Te thin film. The results show that the PEDOT:PSS/Te double-layer structure offers improved conductivity and Seebeck coefficient compared to the hybrid structure, due to the formation of an ohmic contact interface between PEDOT:PSS and Te. The study provides experimental and theoretical support for the development of thin-film thermoelectric materials and devices.
COMPOSITES COMMUNICATIONS
(2021)
Article
Chemistry, Multidisciplinary
Xiaohe Zhang, Xiaowei Lu, Peng Jiang, Xinhe Bao
Summary: Oriented GeTe films with excessive Ge have been obtained by magnetron co-sputtering, which can reduce carrier concentration, increase carrier mobility, and maintain high electrical conductivity. The higher structural symmetry and grain boundary scattering also enhance the Seebeck coefficient of oriented GeTe films. A TE device with the Ge-rich GeTe thin film has been fabricated, achieving a maximum output power density of 0.3 W cm(-2) at ΔT = 250 K. This work demonstrates the effectiveness of stoichiometry and orientation modulations in improving the thermoelectric performance of GeTe thin films.
Article
Chemistry, Physical
Ming Tan, Xiao-Lei Shi, Wei-Di Liu, Meng Li, Yaling Wang, Hui Li, Yuan Deng, Zhi-Gang Chen
Summary: By carefully tuning the deposition temperature to enhance the texture and induce Bi/Sb-Te antisite doping in Bi0.5Sb1.5Te3 thin films, a high ZT value of approximately 1.5 was achieved, showing great potential for practical applications.
ADVANCED ENERGY MATERIALS
(2021)
Article
Materials Science, Ceramics
Marek Bouska, Virginie Nazabal, Jan Gutwirth, Tomas Halenkovic, Petr Nemec
Summary: Radio-frequency magnetron co-sputtering technique was employed to deposit Ge-Sb-Te amorphous thin films, covering a broad range of chemical composition. Large variations in electrical and optical contrast were observed upon annealing-induced crystallization, with the importance of GeTe content in Ge-Sb-Te thin films confirmed.
JOURNAL OF NON-CRYSTALLINE SOLIDS
(2021)
Article
Chemistry, Physical
Woosuck Shin, Akihiro Tsuruta, Toshio Itoh, Takafumi Akamatsu, Ichiro Terasaki
Summary: The high-temperature conductivity of perovskite oxides in LBCO thin films was studied by RF sputtering and thermal annealing. The conductivity varied depending on the substrate material and deposition process, with Co substitution for Cu resulting in increased conductivity and reduced temperature dependence. Transport properties were investigated to understand carrier generation mechanisms in LBCO films.
Article
Chemistry, Physical
Yue-Xing Chen, Jun-Ze Zhang, Mohammad Nisar, Adeel Abbas, Fu Li, Guang-Xing Liang, Ping Fan, Zhuang-Hao Zheng
Summary: This study employs a facile post-selenization diffusion reaction method to introduce Se into Bi2Te3 thin films, aiming to optimize the carrier transport properties. Experimental and theoretical calculations show that Se doping decreases carrier concentration and increases density of states, leading to an enhanced Seebeck coefficient. Furthermore, adjusting the diffusion reaction temperature can maintain carrier concentration while increasing mobility, resulting in a high power factor of 1.5 mW/(m•K2), eight times higher than the pristine Bi2Te3 thin films. Consequently, the thin film device fabricated using the Se-doped Bi2Te3 thin films exhibits the highest output power of 60.20 nW under a temperature difference of 37 K, indicating its potential for practical applications.
JOURNAL OF MATERIOMICS
(2023)
Article
Engineering, Electrical & Electronic
Bruno Galizia, Patrick Fiorenza, Corrado Bongiorno, Bela Pecz, Zsolt Fogarassy, Emanuela Schiliro, Filippo Giannazzo, Fabrizio Roccaforte, Raffaella Lo Nigro
Summary: This study demonstrates the growth of oriented AlN thin films on 4H-SiC substrates using PE-ALD technique, and investigates the impact of NH3 plasma pulsing on the microstructure and orientation degree of the AlN layers. The structural characterization reveals different polymorphic structures depending on the NH3 plasma pulsing time, and electrical nanoscopic characterization shows a correlation between the AlN crystalline phases and the insulating properties.
MICROELECTRONIC ENGINEERING
(2024)
Article
Engineering, Electrical & Electronic
Theo Levert, Alter Zakhtser, Julien Duval, Chloe Raguenez, Stephane Verdier, Delphine Le Cunff, Jean-Herve Tortai, Bernard Pelissier
Summary: In this study, the robustness of optical constants and optical band gap determination of three different materials is compared using a combination of spectroscopic ellipsometry and energy loss signal of X-ray photoelectron spectroscopy. The hybridization of these two techniques provides a new robust method for determining the band gap of the studied materials and other optical properties over a wide energy range.
MICROELECTRONIC ENGINEERING
(2024)
