4.4 Article

Focused helium ion beam milling and deposition

期刊

MICROELECTRONIC ENGINEERING
卷 88, 期 8, 页码 2452-2455

出版社

ELSEVIER SCIENCE BV
DOI: 10.1016/j.mee.2010.11.041

关键词

Helium ion microscope; Gas injection system; Beam-induced deposition; Graphene; Focused ion beam

向作者/读者索取更多资源

The use of a helium ion microscope with an integrated gas injection system for nanofabrication is explored by demonstrating the milling of fine features into single layered graphene and the controlled deposition of tungsten and platinum wires from gaseous precursors. Using pattern generator software to control the path of the beam, nanoelectronic device designs are transferred directly into graphene. Four point contact designs are also defined on SiO2/Si surfaces with atomic force microscopy used to characterize the resulting depositions. Although further optimization of the processes is required and questions of beam-induced damage to the delicate graphene lattice are yet to be answered, the helium ion microscope shows potential to go beyond what is possible with Ga+ focused ion beam technologies in nanoscale device fabrication. (C) 2010 Elsevier B.V. All rights reserved.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.4
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据