Article
Engineering, Electrical & Electronic
Yasuhisa Naitoh, Hisashi Shima, Hiroyuki Akinaga
Summary: In this study, a planar nanogap-based Ta/TaOx/Pt ReRAM junction was fabricated to investigate local compositional changes during direct resistive switching. The results showed that the migration of tantalum atoms played an important role in resistive switching, as evidenced by the formation of pure tantalum pillars. Our nanoscale elemental analysis helped elucidate the mechanism of resistance changes in planar TaO x -ReRAMs through direct visualization of local compositional changes.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Kamilya Smagulova, Mohammed E. Fouda, Fadi Kurdahi, Khaled N. Salama, Ahmed Eltawil
Summary: Deep neural networks (DNNs) can learn real-world data and make real-time decisions, but are hindered by software and hardware limitations. Emerging nonvolatile memory (NVM) devices and the compute-in-memory (CIM) paradigm offer a new hardware architecture for efficient DNN acceleration. This survey reviews ReRAM-based DNN many-core accelerators, highlighting their superiority over CMOS counterparts and the need for new performance metrics and benchmarking standards.
PROCEEDINGS OF THE IEEE
(2023)
Article
Physics, Applied
Li-Heng Li, Kan-Hao Xue, Lan-Qing Zou, Jun-Hui Yuan, Huajun Sun, Xiangshui Miao
Summary: The study achieved uniform and multilevel resistance switching of HfOx memristors through Mg doping, demonstrating its potential for neuromorphic computing applications. By adjusting oxygen vacancy migration and defect states, the conductance modulation performance can be improved.
APPLIED PHYSICS LETTERS
(2021)
Article
Materials Science, Multidisciplinary
Youngjin Kim, Minsung Kim, Jong Hyuk Park, Keun-Young Shin, Sang-Soo Lee, Woojin Jeon
Summary: A novel composite system using AgNW/TiO2 core-shell nanowires without heavy reliance on filler orientation or dispersion was proposed for improving the practical application performance of ReRAM devices.
ORGANIC ELECTRONICS
(2021)
Article
Materials Science, Multidisciplinary
Madhavi Kumara, William Clower, Kiran Seetala, Joshua B. Joffrion, Chester G. Wilson
Summary: This research reports on the development and characterization of ferrite based resistive switching devices, combining the excellent multifunctional memory properties of ferrites and silicon processing technologies. The devices consist of single transition metal ferrites (Co, Cu, Ni, and Zn) confirmed through spectroscopy and X-ray diffraction. Characterization shows low resistive state ohmic conduction and additional non-linear conducting mechanisms, with active electrodes contributing to device stability.
Article
Computer Science, Artificial Intelligence
Qiaozhen Zhou, Fang Wang, Xuanyu Zhao, Kai Hu, Yujian Zhang, Xin Shan, Xin Lin, Yupeng Zhang, Ke Shan, Kailiang Zhang
Summary: This paper investigates the HfOx-based RRAM with embedded tungsten nanoparticles (W NPs) and compares its performance with the regular RRAM device. The results show that the W NPs device exhibits lower switching voltage, more stable cycling endurance, and higher uniformity, which can be attributed to the control and influence on the conductive filaments (CFs) size and paths.
JOURNAL OF INTELLIGENT & FUZZY SYSTEMS
(2023)
Article
Engineering, Electrical & Electronic
Chih-Ying Chen, Yu-Hsiu Feng, Hong-Lin Lu, Feng-En Chang, Jui-Yuan Chen
Summary: In this study, an integrated structure called one phase-change memory one resistive random access memory (1P1R) was proposed to suppress the sneak current during stacking. The 1P1R device remained in a high resistance state to suppress the sneak current, and switched to a working state to write/read its state. The feasibility of the 1P1R structure was confirmed through electrical measurement, and the property analysis provided insight into its speculated mechanism. The results demonstrated that the novel 1P1R structure could effectively suppress sneak current, showing potential for 3D IC manufacturing.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Nanoscience & Nanotechnology
Paola Trotti, Sami Oukassi, Gabriel Molas, Mathieu Bernard, Francois Aussenac, Gael Pillonnet
Summary: This study delves into the innovative idea of a hybrid dual-behavior device based on emerging nonvolatile memory technology, aiming to achieve data retention and energy storage. Evaluation of electrochemical characteristics on RRAM shows potential energy storage capability and proposes design concepts for various emerging and standard applications.
ADVANCED ELECTRONIC MATERIALS
(2021)
Article
Multidisciplinary Sciences
Kanghyeok Jeon, Jeeson Kim, Jin Joo Ryu, Seung-Jong Yoo, Choongseok Song, Min Kyu Yang, Doo Seok Jeong, Gun Hwan Kim
Summary: The self-rectifying resistive memory cell demonstrates impressive endurance and low power consumption, making it suitable for memory-centric applications and potential for large-scale and high-density non-volatile memory.
NATURE COMMUNICATIONS
(2021)
Article
Chemistry, Physical
Seung Woo Han, Moo Whan Shin
Summary: This study fabricates a high-performance flexible RRAM device using a precisely controlled UV laser annealing process, which changes the concentration of O Frenkel defect pairs in the ZnO layer and produces a ZnO/Al mixed interface layer with high quality oxygen reservoirs. The laser-annealed flexible RRAM shows stable resistive switching, performance enhancement, high on/off ratio, cycling endurance, and low power consumption, even at a bending radius of up to 5 mm.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Chemistry, Physical
Seung Woo Han, Chul Jin Park, Moo Whan Shin
Summary: This study demonstrates that the diffusion of aluminum atoms and oxygen vacancies significantly affect the resistive switching behavior of zinc oxide-based random resistive access memory (RRAM). The diffusion of aluminum atoms into the zinc oxide layer acts as dopants, producing additional oxygen vacancies and contributing to the formation of conductive filaments. Additionally, the formation of an aluminum oxide layer by the redox reaction between aluminum atoms and oxygen leads to the instability of the reset process.
SURFACES AND INTERFACES
(2022)
Article
Engineering, Electrical & Electronic
Akhilesh P. Patil, Chetan C. Revadekar, Girish U. Kamble, Somnath S. Kundale, Sunil J. Kadam, Santosh S. Sutar, Pramod J. Patil, Tukaram D. Dongale
Summary: In this research, zinc titanium oxide (ZnTiO3) was synthesized using the solution combustion synthesis technique for resistive memory application. The synthesized material was characterized and a fabricated device demonstrated good resistive switching property and memristive effect. Time series analysis was used to model the switching voltages, and the non-volatile memory measurements showed the device's endurance cycles and data retention capabilities. The study highlights the advantages of solution-processable resistive memory devices and the use of statistical time series analysis for understanding their dynamics.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2022)
Article
Engineering, Electrical & Electronic
Je-Min Hung, Cheng-Xin Xue, Hui-Yao Kao, Yen-Hsiang Huang, Fu-Chun Chang, Sheng-Po Huang, Ta-Wei Liu, Chuan-Jia Jhang, Chin- Su, Win-San Khwa, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Mon-Shu Ho, Chung-Cheng Chou, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang
Summary: Advanced complementary metal-oxide-semiconductor technology and resistive random-access memory have been used to create a high-bit-precision compute-in-memory macro for efficient edge computing. The non-volatile computing-in-memory architecture reduces latency and energy consumption of artificial intelligence computation. The macro offers low latency and high energy efficiency for binary to 8-bit-input-8-bit-weight dot-product operations.
NATURE ELECTRONICS
(2021)
Article
Engineering, Electrical & Electronic
Wei-Chen Chen, Shengjun Qin, Zhouchangwan Yu, H. -S. Philip Wong
Summary: The insertion of a thin SnO2 layer within the HfO2 switching layer significantly reduces variations in write voltage and read resistance for resistive random access memory. This approach improves the performance and stability of the memory device by decreasing cycle-to-cycle differences and retaining a tight resistance distribution after a large number of pulse cycles. The thin SnO2 acts as an oxygen stopping layer, explaining the origin of reduced variability and showing promise for reducing variability in resistive memory technology.
IEEE ELECTRON DEVICE LETTERS
(2021)
Review
Computer Science, Information Systems
Weijian Chen, Zhi Qi, Zahid Akhtar, Kamran Siddique
Summary: This paper discusses various methods and design schemes for ReRAM-based PIM neural network accelerators, and addresses the limitations or challenges of ReRAM in a neural network.
Article
Engineering, Electrical & Electronic
Bruno Galizia, Patrick Fiorenza, Corrado Bongiorno, Bela Pecz, Zsolt Fogarassy, Emanuela Schiliro, Filippo Giannazzo, Fabrizio Roccaforte, Raffaella Lo Nigro
Summary: This study demonstrates the growth of oriented AlN thin films on 4H-SiC substrates using PE-ALD technique, and investigates the impact of NH3 plasma pulsing on the microstructure and orientation degree of the AlN layers. The structural characterization reveals different polymorphic structures depending on the NH3 plasma pulsing time, and electrical nanoscopic characterization shows a correlation between the AlN crystalline phases and the insulating properties.
MICROELECTRONIC ENGINEERING
(2024)
Article
Engineering, Electrical & Electronic
Theo Levert, Alter Zakhtser, Julien Duval, Chloe Raguenez, Stephane Verdier, Delphine Le Cunff, Jean-Herve Tortai, Bernard Pelissier
Summary: In this study, the robustness of optical constants and optical band gap determination of three different materials is compared using a combination of spectroscopic ellipsometry and energy loss signal of X-ray photoelectron spectroscopy. The hybridization of these two techniques provides a new robust method for determining the band gap of the studied materials and other optical properties over a wide energy range.
MICROELECTRONIC ENGINEERING
(2024)
