Article
Chemistry, Analytical
Tasso von Windheim, Kristin H. Gilchrist, Charles B. Parker, Stephen Hall, James B. Carlson, David Stokes, Nicholas G. Baldasaro, Charles T. Hess, Leif Scheick, Bernard Rax, Brian Stoner, Jeffrey T. Glass, Jason J. Amsden
Summary: This paper presents a fully integrated vacuum microelectronic NOR logic gate that uses microfabricated polysilicon panels with integrated carbon nanotube field emission cathodes. The gate consists of two parallel vacuum tetrodes fabricated using polysilicon Multi-User MEMS Processes. Each tetrode exhibits transistor-like performance, but with a low transconductance due to a coupling effect between the anode voltage and cathode current. The NOR logic capabilities are demonstrated by the parallel operation of the tetrodes, although the device exhibits asymmetric performance.
Article
Engineering, Mechanical
Chaoqun Dang, Anliang Lu, Heyi Wang, Limin Yang, Xiaocui Li, Hongti Zhang, Yang Lu
Summary: This review focuses on the extreme mechanical deformations of diamond at small scales, including ultrahigh hardness, ultralarge bending/tensile elasticity, localized plastic deformation, etc., for structural and functional applications. The modulation of diamond's electronic properties through elastic strain engineering and the exploration of strain-mediated quantum information technologies are highlighted. Prospective research directions for enhancing and utilizing the extreme mechanical behavior of micro/nano-fabricated diamonds are suggested.
EXTREME MECHANICS LETTERS
(2023)
Article
Materials Science, Multidisciplinary
S-J Wang, M. Sawatzki, H. Kleemann, I Lashkov, D. Wolf, A. Lubk, F. Talnack, S. Mannsfeld, Y. Krupskaya, B. Buechner, K. Leo
Summary: Rubrene single crystal domains with hundreds of micrometers size covering different substrates are achieved by thermal annealing and the assistance of a thin glassy underlayer, enabling high-performance rubrene crystalline transistors. The contact resistance of the transistors is significantly reduced through doping techniques, paving the way for novel high-performance organic electronics using crystalline active materials.
MATERIALS TODAY PHYSICS
(2021)
Review
Physics, Multidisciplinary
Furqan Zahoor, Mehwish Hanif, Usman Isyaku Bature, Srinivasu Bodapati, Anupam Chattopadhyay, Fawnizu Azmadi Hussin, Haider Abbas, Farhad Merchant, Faisal Bashir
Summary: The research interest in carbon nanotube field effect transistors (CNTFETs) has grown rapidly in the post Moore era due to the approaching scaling limits of conventional silicon-based CMOS devices. CNTs have been extensively studied as a promising alternative to silicon transistors, offering benefits such as minimal short channel effects, high mobility, and high normalized drive currents. This manuscript provides a detailed description of recent advances in CNTFETs, focusing on their broad applications and discussing their future prospects in the context of aggressively scaled transistor technologies.
Article
Chemistry, Physical
Kazuki Kobayashi, Xufang Zhang, Toshiharu Makino, Tsubasa Matsumoto, Takao Inokuma, Satoshi Yamasaki, Christoph E. Nebel, Norio Tokuda
Summary: In this study, a new method was proposed to create a buried heavily boron doped p+-structure with a step-free diamond surface in nitrogen doped diamond. Experimental observations and measurements confirmed the successful formation of the buried structure and uniform doping.
APPLIED SURFACE SCIENCE
(2022)
Article
Computer Science, Information Systems
Qian Lin, Xiao-Zheng Wang, Hai-Feng Wu, Li-Ning Jia
Summary: The nonlinear representation is crucial in microwave circuit design, but traditional large-signal modeling methods face problems. This paper proposes an X-parameter modeling method based on extreme learning machine (ELM) and demonstrates its effectiveness through experiments.
Article
Engineering, Electrical & Electronic
Duo Xu, Wei Shao, Lijiao Wang, Shaomeng Wang, Tenglong He, Zhanliang Wang, Zhigang Lu, Huarong Gong, Zhaoyun Duan, Yubin Gong
Summary: In this letter, a semi-analytic numerical algorithm called the pillbox window mode-matching algorithm (PWMMA) is proposed for general pillbox windows, showing consistent calculation results with CST Microwave Studio (CST-MWS) in significantly reduced time. Four pillbox windows with double-side metalized diamond disks were fabricated and tested at specific frequency bands, proving experimental transmission characteristics to be consistent with the PWMMA calculation results.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Materials Science, Multidisciplinary
Kelly Liang, Yuchen Zhou, Calla M. McCulley, Xin Xu, Ananth Dodabalapur
Summary: This paper presents a device design paradigm for thin-film transistors (TFTs) suitable for flexible and printed electronics fabrication. The proposed architecture utilizes nanospike-shaped electrodes as the source and drain electrodes, resulting in improved carrier injection, gate control, and lower voltage requirements. The design is also tolerant of thick gate insulators and requires only one level of high-resolution patterning.
FLEXIBLE AND PRINTED ELECTRONICS
(2022)
Article
Chemistry, Physical
Te Bi, Yuhao Chang, Wenxi Fei, Masayuki Iwataki, Aoi Morishita, Yu Fu, Naoya Niikura, Hiroshi Kawarada
Summary: A C-Si bonded SiO2/diamond interface was formed during selective diamond growth at high temperature in a H-2 atmosphere with 5% methane. The resulting C-Si diamond MOSFETs exhibited high stability, field-effect mobility, and a high on/off ratio, showcasing potential for advanced electronic applications.
Article
Engineering, Electrical & Electronic
Giacomo Graziano, Alberto Ferraris, Eunjung Cha, Cezar B. Zota
Summary: The recent developments in quantum computing architectures have sparked interest in cryogenic low-noise amplifiers (LNAs) due to their role in quantum bit readout chains. The integration of thousands of LNAs with minimal power dissipation and low noise is crucial for advanced quantum computers with many qubits. However, the self-heating and heat dissipation of cryogenic LNAs still represent limiting factors in their performance and integration.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Ronaldo Martins da Ponte, Nikolas Gaio, Henk van Zeijl, Sten Vollebregt, Paul Dijkstra, Ronald Dekker, Wouter A. Serdijn, Vasiliki Giagka
Summary: This paper presents the co-fabrication of a CMOS smart sensor for real-time temperature measurement in organ-on-a-chip (OOC) technology, showing its advantages in temperature control.
SENSORS AND ACTUATORS A-PHYSICAL
(2021)
Article
Engineering, Electrical & Electronic
Mustafa Berke Yelten
Summary: This tutorial introduces the concept of holistic modeling in the context of metal-oxide-semiconductor field-effect-transistors (MOSFETs). It compares standard MOSFET modeling approaches, explains factors impacting MOSFET operation, and demonstrates the need for considering these factors. An implementation strategy for holistic modeling is proposed.
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
(2022)
Review
Materials Science, Multidisciplinary
Michael Huff
Summary: This paper reviews the topic of device parameter variations in semiconductor-based manufacturing of micro- and nano-devices, emphasizing the importance of understanding and managing these variations for improved manufacturing yield. It discusses the misconception that smaller size always means more precision in manufacturing methods and highlights the increased attention on analog functionality devices. The paper also presents methods for estimating and managing the impact of device parameter variations, as well as their effect on manufacturing yield.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2021)
Article
Engineering, Electrical & Electronic
Lan Bi, Xuanwu Kang, Xinhua Wang, Haibo Yin, Jie Fan, Ke Wei, Yingkui Zheng, Sen Huang, Xinyu Liu
Summary: By integrating an enhancement-mode metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) with a high-performance lateral Schottky barrier controlled Schottky (LSBS) rectifier on an ultrathin-barrier AlGaN/GaN heterostructure grown on a Si substrate, a monolithic integrated E-mode power device with a state-of-the-art reverse conduction voltage of 0.455 V and a threshold voltage of 1.55 V was achieved, showing a small temperature variation of 0.66% from 0 degrees C to 150 degrees C.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Xin Chen, Markus Mohr, Kai Bruehne, Michael Mertens, Peter Gluche, Immo Garrn, Hans-Joerg Fecht
Summary: In this study, a wear sensor prototype based on a nanocrystalline diamond multilayer system is developed to quantitatively monitor the wear situation of the coating on cutting tools. The impedance measurement is used to determine the wear level of the coating, and a theoretical model is established to simulate the sensor's working principle.
MICRO AND NANO ENGINEERING
(2022)
Article
Engineering, Electrical & Electronic
D. R. Ball, B. D. Sierawski, K. F. Galloway, R. A. Johnson, M. L. Alles, A. L. Sternberg, A. F. Witulski, R. A. Reed, R. D. Schrimpf, A. Javanainen, J. -M. Lauenstein
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2019)
Article
Engineering, Electrical & Electronic
Lei Shu, Liang Wang, Xin Zhou, Tong-De Li, Zhang-Yi'an Yuan, Cheng-long Sui, Yuan Li, Bi Wang, Yuan-Fu Zhao, Kenneth F. Galloway
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2019)
Article
Engineering, Electrical & Electronic
Robert A. Johnson, Arthur F. Witulski, Dennis R. Ball, Kenneth F. Galloway, Andrew L. Sternberg, Enxia Zhang, Landen D. Ryder, Robert A. Reed, Ronald D. Schrimpf, John A. Kozub, Jean-Marie Lauenstein, Arto Javanainen
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2019)
Article
Engineering, Electrical & Electronic
Rebekah A. Austin, Brian D. Sierawski, Robert A. Reed, Ronald D. Schrimpf, Kenneth F. Galloway, Dennis R. Ball, Arthur F. Witulski
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2020)
Article
Engineering, Electrical & Electronic
Robert A. Johnson, Arto Javanainen, Ashok Raman, Partha S. Chakraborty, Robert R. Arslanbekov, Arthur F. Witulski, Dennis R. Ball, Kenneth F. Galloway, Andrew L. Sternberg, Robert A. Reed, Ronald D. Schrimpf, Micheal L. Alles, Jean-Marie Lauenstein
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2020)
Article
Engineering, Electrical & Electronic
D. R. Ball, J. M. Hutson, A. Javanainen, J. -M. Lauenstein, K. F. Galloway, R. A. Johnson, M. L. Alles, A. L. Sternberg, B. D. Sierawski, A. F. Witulski, R. A. Reed, R. D. Schrimpf
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2020)
Article
Engineering, Electrical & Electronic
Lei Shu, Yuan-Fu Zhao, Kenneth F. Galloway, Liang Wang, Kai Zhao, Xin Zhou, Chao-Ming Liu, Wei-Yi Cao, Cheng-Long Sui, Wei-Ping Chen, Li-Yi Xiao, Tian-Qi Wang
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2020)
Article
Engineering, Electrical & Electronic
Lei Shu, Liang Wang, Kai Zhao, Xin Zhou, Yuan-Fu Zhao, Kenneth F. Galloway, Cheng-Long Sui, Chao-Ming Liu, Wei-Yi Cao, Wei-Ping Chen, Ming Qiao, Tian-Qi Wang
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2020)
Article
Engineering, Electrical & Electronic
Lei Shu, Chun-Hua Qi, Kenneth F. Galloway, Yuan-Fu Zhao, Wei-Yi Cao, Xin-Jian Li, Liang Wang, En-Xia Zhang, Xin-Sheng Wang, Rui-Xin Shi, Xin Zhou, Wei-Ping Chen, Ming Qiao, Bin Zhou, Chao-Ming Liu, Liang Ma, Yan Qing Zhang, Tian-Qi Wang
Summary: The study demonstrates the single event burnout (SEB) of NLDMOSFETs on SOI induced by pulsed laser irradiation for the first time, exploring the sensitive region of the device and the effects of reverse voltage and laser energy. The data suggests that the device is most sensitive to laser pulses in the drift region near the P-well. Furthermore, the SEB threshold depends on both the applied reverse voltage and the laser pulse energy, with the laser pulse energy required to initiate SEB being inversely proportional to the distance from the P-well.
MICROELECTRONICS RELIABILITY
(2021)
Article
Engineering, Electrical & Electronic
K. Muthuseenu, H. J. Barnaby, K. F. Galloway, A. E. Koziukov, T. A. Maksimenko, M. Y. Vyrostkov, K. B. Bu-Khasan, A. A. Kalashnikova, A. Privat
Summary: This article compares and analyzes the single-event gate rupture (SEGR) response of silicon planar gate super-junction (SJ) power metal oxide semiconductor field effect transistors (MOSFETs) and vertical double diffused power MOSFETs (VDMOSs). The study shows that SJMOS has better SEGR tolerance than VDMOS for heavy-ion strikes at different angles.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2021)
Article
Engineering, Electrical & Electronic
K. Muthuseenu, H. J. Barnaby, K. F. Galloway, A. E. Koziukov, T. A. Maksimenko, M. Y. Vyrostkov, K. B. Bu-Khasan, A. A. Kalashnikova, A. Privat
Summary: This study introduces a design for a 650V super-junction power MOSFET that enhances tolerance to SEB and SEGR. Experimental measurements validate the design accuracy, showing that the trench gate SJ device design improves survivability to SEGR.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
D. R. Ball, K. F. Galloway, R. A. Johnson, M. L. Alles, A. L. Sternberg, A. F. Witulski, R. A. Reed, R. D. Schrimpf, J. M. Hutson, J-M Lauenstein
Summary: Thicker and lightly doped epitaxial region significantly increases the threshold at which ion-induced SEB occurs in SiC power MOSFETs and JBS diodes. Using a 3300V power MOSFET provides a significant increase in SEB threshold margin compared to a 1200V MOSFET, with minor impact on power dissipation during normal operation.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2021)
Article
Engineering, Electrical & Electronic
Robert A. Johnson, Arthur F. Witulski, Dennis R. Ball, Kenneth F. Galloway, Andrew L. Sternberg, Robert A. Reed, Ronald D. Schrimpf, Michael L. Alles, Jean-Marie Lauenstein, John M. Hutson
Summary: This study presents a method for analyzing ion-induced reverse leakage current in SiC power devices, allowing for the estimation of the impact of different ion strikes on leakage current.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2022)
Proceedings Paper
Engineering, Electrical & Electronic
Xingji Li, Jianqun Yang, Hugh J. Barnaby, Pengwei Li, Xiangsong Sun, Lei Dong, Kenneth F. Galloway, R. D. Schrimpf, D. M. Fleetwood
Summary: This paper investigates the sensitive region of displacement damage in LPNP induced by 10 MeV Si ions, 40 MeV Si ions, and 3 MeV protons. Electrical parameters are measured in-situ during irradiation, and deep level transient spectroscopy (DLTS) is used to characterize the radiation-induced defects. Experimental results show that the excess base current increases with increasing irradiation fluence, while the ideality factor remains constant. The change in the reciprocal of current gain can be normalized in one line when considering the Si/SiO2 interface as the sensitive region. DLTS results indicate that the radiation defects in LPNP devices caused by these particles are mainly interface traps.
2019 19TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS)
(2022)
Article
Engineering, Electrical & Electronic
Lei Shu, Yuan-Fu Zhao, Kenneth F. Galloway, Liang Wang, Xin-Sheng Wang, Zhang-Yi'an Yuan, Xin Zhou, Wei-Ping Chen, Ming Qiao, Tian-Qi Wang
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2020)
Article
Engineering, Electrical & Electronic
Bruno Galizia, Patrick Fiorenza, Corrado Bongiorno, Bela Pecz, Zsolt Fogarassy, Emanuela Schiliro, Filippo Giannazzo, Fabrizio Roccaforte, Raffaella Lo Nigro
Summary: This study demonstrates the growth of oriented AlN thin films on 4H-SiC substrates using PE-ALD technique, and investigates the impact of NH3 plasma pulsing on the microstructure and orientation degree of the AlN layers. The structural characterization reveals different polymorphic structures depending on the NH3 plasma pulsing time, and electrical nanoscopic characterization shows a correlation between the AlN crystalline phases and the insulating properties.
MICROELECTRONIC ENGINEERING
(2024)
Article
Engineering, Electrical & Electronic
Theo Levert, Alter Zakhtser, Julien Duval, Chloe Raguenez, Stephane Verdier, Delphine Le Cunff, Jean-Herve Tortai, Bernard Pelissier
Summary: In this study, the robustness of optical constants and optical band gap determination of three different materials is compared using a combination of spectroscopic ellipsometry and energy loss signal of X-ray photoelectron spectroscopy. The hybridization of these two techniques provides a new robust method for determining the band gap of the studied materials and other optical properties over a wide energy range.
MICROELECTRONIC ENGINEERING
(2024)
