期刊
MICROELECTRONIC ENGINEERING
卷 87, 期 5-8, 页码 972-976出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.mee.2009.11.131
关键词
FIBID; Raster scan; Phenanthrene gas; Carbon; Beam overlap
资金
- Korea Evaluation Institute of Industrial Technology (KEIT) [10011365] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Material addition using focused ion beam induced deposition (FIBID) is a well-established local deposition technology in microelectronic engineering. We investigated FIBID characteristics as a function of beam overlap using phenanthrene molecules. To initiate the localization of gas molecules, we irradiated the ion beams using a raster scan. We varied the beam overlap between -900% and 50% by adjusting the pixel size from 300 nm to 15 nm. We discuss the changes in surface morphologies and deposition rates due to delocalization by the range effect of excited surface atoms, the divided structure by continuous effect from the raster scan, enhanced localization by discrete effect from replenished gas molecules, the competition between deposition and sputtering processes, and the change in processing time with scan speed (smaller overlap case). (C) 2009 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据