期刊
MICROELECTRONIC ENGINEERING
卷 86, 期 7-9, 页码 1751-1755出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.mee.2009.03.125
关键词
Grain boundaries; Defects; Electronic properties
资金
- EPSRC [EP/F067496/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/F067496/1] Funding Source: researchfish
Grain boundaries have been implicated in current leakage and dielectric breakdown of CMOS devices. We calculate the electronic properties of oxygen vacancy defects near grain boundaries in the dielectric insulators MgO and HfO(2) using first principles methods. In both materials we find that oxygen vacancies favourably segregate to grain boundaries, in various charge states. Their electronic properties are different from their counterparts in the bulk. At increased concentrations, such defects at grain boundaries may play a key role in processes such as electron tunneling, charge trapping and dielectric breakdown in electronic devices. (C) 2009 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据