期刊
MICROELECTRONIC ENGINEERING
卷 86, 期 10, 页码 2030-2033出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.mee.2009.01.027
关键词
HgSe nanocrystals; Thin-film transistor; UV/ozone treatment; Flexible device
资金
- National R&D Project for Nano Science and Technology [10022916-2006-22]
- Center for Integrated-Nano-Systems (CINS)
- Korea Research Foundation [KRF-2006-005-JO3601]
- Korea Ministry of Commerce, Industry and Energy, the Korea Science and Engineering Foundation (KOSEF)
- National Research Lab. Program [ROA-2005-000-10045-02]
- Nano RD Program [M10703000980-07M0300-98010]
We demonstrate bottom-gate thin-film transistors (TFTs) based on solution-processed HgSe nanocrystals (NCs) on plastic substrates. Solid films made of spin-coated HgSe NCs were heated at a temperature of 150 degrees C for 15 min to maximize the magnitude of their current, and these films were utilized as the channel layers of TFTs. A representative TFT with a bottom-gate Al2O3 layer operated as a depletion-mode one with an n-channel, exhibiting a field effect mobility of 3.9 cm(2)/VS and an on/off current ratio of about 10(2). In addition, the electrical characteristics of the TFT on bent substrates are briefly described. (C) 2009 Elsevier B.V. All rights reserved.
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