期刊
MICROELECTRONIC ENGINEERING
卷 85, 期 5-6, 页码 1039-1042出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.mee.2008.01.093
关键词
RF MEMS switch; semi-suspended CPW; high-resistivity silicon (HRS); microwave losses; surface-passivation HRS; titanium oxide (TiO2)
A high capacitive ratio RF MEMS switch, with low-actuation voltage is designed, fabricated and experimentally validated on high-resistivity silicon (HRS) substrate. Thanks to very good fabrication control of all steps and to the high dielectric constant of TiO2, a down/up capacitive ratio close to 200 is achieved with 8 V pull-in. It is also demonstrated that, using a passivated-surface HRS and semi-suspended conductors on air, the microwave losses in the CPW line are as low as 0.1 dB/mm at 20 GHz. The reported RF MEMS shunt capacitor is expected to serve as core device for phase shifting applications in the 10-20 GHz range, both for switching operations and as a variable capacitor in distributed MEMS transmission lines (DMTLs). (C) 2008 Elsevier B.V. All rights reserved.
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