期刊
APPLIED SURFACE SCIENCE
卷 344, 期 -, 页码 33-37出版社
ELSEVIER
DOI: 10.1016/j.apsusc.2015.03.099
关键词
NiO films; Magnetron sputter; Thermal oxidation; Optoelectronic
类别
资金
- Foundation of Xuchang University [2013062]
- Program for Science & Technology of Henan Province [122102210419]
In this work, NiO coating was fabricated by magnetron sputtering method on quartz and indium tin oxide (ITO) substrates in an inert gas ambient of Ar followed by a thermal oxidation process in air at 400 degrees C for 2 h. The NiO coating was analyzed by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM), and UV-vis spectrometer. A preliminary photovoltaic performance measurement of the as-prepared device (ITO/NiO/poly-TPD/PC71BM/Al) shows a short circuit current density (J(sc)) of 5.6 mA cm(-2) and power conversion efficiency (PCE) of 1.5% under an illumination of 100 mW cm(-2). The PCE of device with NiO HTLs was ca. 20% higher than those of the devices based on PEDOT:PSS hole transport layers (HTLs). The thermal oxidation fabricated NiO coating may provide an excellent route to fabricate other NiO-based optoelectronic devices. (C) 2015 Elsevier B.V. All rights reserved.
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