期刊
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
卷 171, 期 1-3, 页码 159-161出版社
ELSEVIER
DOI: 10.1016/j.mseb.2010.03.091
关键词
HfO2 high-k dielectric; Stress-induced leakage current; Constant Voltage Stress
资金
- National Natural Science Foundation of China [50902110]
- National Aerospace Science Foundation of China [2008ZF53058]
- Specialized Research Foundation for Doctoral Program of Higher Education of China [200806991032]
The conduction mechanism and the behavior of stress-induced leakage current (SILC) through the HfO2 high-k layers in metal-oxide-semiconductor (MOS) structures have been investigated. Assisted tunneling of electrons via stress-induced interface traps and bulk oxide traps are responsible for the SILC generation in HfO2 dielectric. This trapping process depends on the polarity of the applied gate voltage and oxide thickness. The current conduction mechanism of the HfO2 films is dominated by Poole-Frenkel emission under substrate injection in the region from 1.5 MV/cm to 2.6 MV/cm, confirming that the SILC mechanism is related to the trapping process. (C) 2010 Elsevier B.V. All rights reserved.
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