A two-step annealing process for Ni silicide formation in an ultra-thin body RF SOI MOSFET

出版年份 2007 全文链接

标题

A two-step annealing process for Ni silicide formation in an ultra-thin body RF SOI MOSFET

作者

关键词

-

出版物

Materials Science and Engineering B-Advanced Functional Solid-State Materials

Volume 147, Issue 2-3, Pages 183-186

出版商

Elsevier BV

发表日期

2007-10-02

DOI

10.1016/j.mseb.2007.09.020

向作者/读者发起求助以获取更多资源

Protocol

Reagent

Reprint

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now

© Peeref 2019-2024. All rights reserved.