期刊
MATERIALS RESEARCH-IBERO-AMERICAN JOURNAL OF MATERIALS
卷 16, 期 5, 页码 1156-1160出版社
UNIV FED SAO CARLOS, DEPT ENGENHARIA MATERIALS
DOI: 10.1590/S1516-14392013005000101
关键词
ITO; CVD; pH sensor; field-effect transistor
资金
- CNPq
- CAPES
- FAPEMIG
- FAPESP
Polycrystalline ITO films with good optoelectronics characteristics and homogeneous surface has been obtained upon annealing at 550 degrees C in N-2 atmosphere using a low-cost chemical vapor deposition (CVD) system. The films were evaluated as pH sensors in separative extended gate field-effect transistor (SEGFET) apparatus, exhibiting a sensitivity of 53 mV/pH, close to the expected Nernstian theoretical value for ion sensitive materials. The use of CVD process to synthesize ITO, as described here, may represent an alternative for fabrication of SEGFET pH sensors at low cost to be used in disposable biosensors since H+ ions are the product of several oxireductase enzymes.
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